Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture a semiconductor device exhibiting a gate structure in short gate length, low gate resistance and small gate capacity by a method wherein the first layer gate metal is formed through the intermediary of a mask layer having an opening, the second layer gate metal in larger width than that of the said opening is formed, and then the first layer gate metal is patterned using the second layer gate metal as a mask. CONSTITUTION:The first layer gate metal 14 is formed by coating on a semiconductor region 11 through the intermediary of a mask layer 12 having an opening 13 and then the second layer gate metal 17 in width W2 wider than the width W1 of the opening 13 is formed by coating the first layer gate metal 14. Next, the first layer gate metal 14 is patterned using the second layer gate metal 17 as a mask; a gate electrode 18 is formed of the first layer metal 14 and the second layer gate metal 17; and then the mask layer 12 is removed. For example, as mentioned above, the gate electrode 18 in sectional T-shape is formed of the Al layer 14 as a Schottky metal and the Au layer 17 thereon and then the photoresist layer 12 is removed. Later, an insulating film 20 such as SiN, etc., is formed by coating the whole surface by pressure-reduced CVD process so as to give a space 19 in an overhang part.

Inventors

• 👤 Junichiro Kobayashi
• 👤 純一郎 小林

Bibliographic Details