Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To control a position, where there is a crystal grain boundary, and to form a semiconductor element selectively in a crystallized region by choicely crystal-growing single crystal silicon, etc., onto an insulating amorphous material. CONSTITUTION:An amorphous material layer 102 mainly comprising silicon is formed onto an insulating amorphous material 101, and an optical absorption layer 103 having a band gap narrower than the amorphous material is shaped onto the layer 102, and removed through etching with the exception of sections as seed regions 104. The amorphous material layer 102 is crystal-grown through heat treatment while irradiating light. Light is irradiated in order to make the temperatures of the seed regions 104 higher than other regions and easily generate crystal growth selectively from the seed regions at that time. Lastly, semiconductor elements 106-111 are formed to a crystal-grown silicon layer 105. Accordingly, the position of a crystal grain boundary is controlled, and the semiconductor elements can be shaped selectively in a crystal region.

Inventors

• 👤 Hideaki Oka
• 👤 秀明 岡

Bibliographic Details