Semiconductor pressure sensor

Abstract

Abstract PURPOSE:To eliminate special consideration for insulation properties of a metal package and a semiconductor pressure sensor chip and to realize stable characteristics change of the pressure sensor by enclosing an area which functions as the pressure sensor and by providing a trench oxide film to insulate and isolate it electrically. CONSTITUTION:An oxide film 12 is formed on a first (100) silicon semiconductor substrate 11. An area which functions as a pressure sensor is formed on a second (100) N-type silicon semiconductor substrate 13 which is joined on the oxide film 12 through anode junction. A trench oxide film 15 is formed to enclose the area, and the area which functions as the pressure sensor is electrically insulated and isolated by the oxide film 12 and the trench oxide film 15. Therefore, a pressure sensor section is completely insulated electrically, and insulated by an oxide film which is an electrically ideal insulating material. Thereby, even if the assembly is carried out directly to a metal package, it is unnecessary to give any consideration for electrical insulation properties. Stability can be realized against characteristics change of the pressure sensor caused by disturbance such as heat or light in this way.

Inventors

• 👤 Kiyoshi Ishibashi
• 👤 清志 石橋

Bibliographic Details