Thin film el device

Abstract

Abstract PURPOSE:To broaden hysteresis width of a hysteresis characteristic between applied voltage and emission luminance for a thin film EL device having a photoconductive layer by forming the photoconductive layer using microcrystalline silicon including a certain element. CONSTITUTION:On a substrate 1, a first conductive layer 2, a first insulating layer 3, an emission layer 4, and a photoconductive layer 6 are deposited so as to form a thin film EL device. The photoconductive layer 6 is composed of a first microcrystalline silicon layer 61, an amorphous silicon hydride layer 62, and a second microcrystalline silicon layer 63, which are deposited in order. A group V element in a periodic table is included as a dopant in the first microcrystalline silicon layer 61 and/or the second microcrystalline silicon layer 63. Empirically, the hysteresis width before and after the applied voltage of 200V, for example, is 30-35V in this manufacturing method, compared to 25V for another manufacturing method in which the microcrystalline silicon layer is replaced with another substance.

Inventors

• 👤 Yasuo Tsuruoka
• 👤 恭生 鶴岡
• 👤 Makoto Fujikura
• 👤 誠 藤倉
• 👤 Akinori Sato
• 👤 昭典 佐藤

Bibliographic Details