Thin film transistor element array

Abstract

Abstract PURPOSE:To obtain a thin film transistor element array whose gate leak current is small by forming enbloc a gate insulating film on the whole surface of a substrate. CONSTITUTION:After a source electrode 10 and a drain electrode 11 are formed on a substrate 3, the pattern thin film of an a-Si:H film as a semiconductor layer 9 is formed by photochemically decomposing disilane gas with ArF laser 1. Then the glass substrate 3 is carried into a CVD chamber 7, and an SiN film is subjected to plasma CVD using silane and ammonia as material gas, thereby forming a gate insulating film 12. By sputtering, a chromium film is formed on the glass substrate 3, and a gate electrode 13 is formed by patterning. An element array of this structure is almost free from leak current from a gate electrode, and excellent element operation is realized for a long time.

Inventors

• 👤 Yuko Hiura
• 👤 樋浦　祐子

Bibliographic Details