High-resistance semiconductor layer buried type semiconductor laser and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a low-threshold current and high external differentiated quantum efficiency from the title laser by constituting the active area of the device of two layers of a resistant semiconductor layer and n-type semiconductor layer and separating a p-type clad layer from a high-resistance semiconductor layer so that no contacting part can exist between the p-type clad layer and high-resistance semiconductor layer. CONSTITUTION:At least a stripe-like active area containing an active layer 18 and current blocking layers provided on both sides of the active area are provided and each of the current blocking layers is composed of two layers of a high-resistance semiconductor layers 12 having a deep level at which electrons are caught and an n-type semiconductor layer 13. In addition, a p-type clad layer 14 is separated from the layer 12 by means of the layer 13 so that no contacting part can exist between the layers 14 and 12. As a result, occurrence of a leak current hardly takes place and an applied current is effectively converted into light at the active layer. Therefore, a low-threshold current and high external differentiated quantum efficiency 6, etc., can be expected.

Inventors

• 👤 Yoshihiro Koizumi
• 👤 善裕 小泉

Bibliographic Details