Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To dissolve the asymmetry of the configurations of a source and a drain and moreover, to prevent the deterioration of a transconductance by a method wherein an impurity being contained in sidewalls, which are formed almost equally on the sidewalls of a gate electrode, is diffused and low-concentration regions are respectively formed on the inner side of each high-concentration region. CONSTITUTION:An etching treatment is performed using an RIE anisotropic etching method in such a way that the remnant of a poly Si film 12 is left on the sidewall parts of a gate electrode 3. Thereby, the film 2, which is located on the electrode 3 and is located at regions other than the regions under the sidewalls 14, is removed and an oxide film 11 on the electrode 3 is also removed. Then, a high-concentration N-type impurity 8 is ion-implanted using the sidewalls 14 and the electrode 13 as masks. After that, when a heat treatment is performed on the whole substrate, high- concentration regions 9 of 10<20>piece/cm<3> or thereabouts are formed in the ion-implanted regions and low-concentration regions 5, where are diffused from the sidewalls 14 consisting of an impurity-containing insulating film and has 10<18>piece/cm<3> or thereabouts, are respectively formed on the inner side of each region 9. Thereby, an LDD structure having the bilaterally symmetrical low-concentration regions is obtained.

Inventors

• 👤 Takahisa Shigemori
• 👤 貴尚 栄森
• 👤 Yoshinori Tanaka
• 👤 義典 田中
• 👤 Koji Ozaki
• 👤 浩司 小崎
• 👤 Wataru Wakamiya
• 👤 若宮　亙

Bibliographic Details