Processing of compound semiconductor

Abstract

Abstract PURPOSE:To process a compound semiconductor with little damage in a comparatively short time and to directly draw a pattern by using focused accelerating electrons by a method wherein the surface of the compound semiconductor is irradiated with a hydrocarbon gas as a reactive gas and is irradiated with accelerating electrons. CONSTITUTION:The surface of a compound semiconductor 4 is irradiated with a hydrocarbon gas as a reactive gas and is irradiated with accelerating electrons 11; and thereby, a region, irradiated with the accelerating electrons, of the compound semiconductor 4 is processed. For example, a deflector used to scan an electron beam 11 and its control apparatus are added to a processing apparatus, as shown in the figure, composed of the following: an electron-beam generation part 1 with which a compound semiconductor 4 is irradiated with the electron beam 11 through an electron lens for electron-beam focusing use; a nozzle 2 with which a compound semiconductor 4 is irradiated with a hydrocarbon compound; a vacuum container 10; a stage 5; and an evacuation part 7. GaAs is used as the compound semiconductor 4; CH4 is used as a reactive gas; and a prescribed region is removed from the surface of the compound semiconductor 4 by using the electron beam accelerated at an accelerating voltage of 10kV.

Inventors

• 👤 Hiromi Hidaka
• 👤 日高　啓視
• 👤 Mototaka Tanetani
• 👤 元隆 種谷
• 👤 Yoshimasa Sugimoto
• 👤 喜正 杉本
• 👤 Kenzo Akita
• 👤 秋田　健三

Bibliographic Details