Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To remove attack to a sidewall by ions, to prevent the etching of a sidewall protective film and to obtain the anisotropic shape of aluminum stably by conducting the reactive ion etching of aluminum in structure in which an insulating film such as an oxide film is formed onto the rear of a wafer. CONSTITUTION:An inter-layer film 3 is shaped onto the surface of a silicon substrate 4, and an insulating film 5a is grown onto the rear of a wafer through CVD before aluminum 2 is sputtered. Aluminum 2 is sputtered, patterning is performed by a resist 1, and reactive ion etching is executed. Since the wafer is insulated electrically by the insulating film 5 on the rear, aluminum 2 itself has no negative charge, thus attacking no sidewall of aluminum 2 by ion bombardment 6, then etching no polymer 7 for protecting the sidewall, provided that aluminum is anisotropic formed excellently.

Inventors

• 👤 Mitsuhiko Kimura
• 👤 光彦 木村

Bibliographic Details