Forming method of electrode on microwave dielectric ceramic

Abstract

Abstract PURPOSE:To improve reliability by changing a copper film formed through electroless plating into an electrode through specific treatment. CONSTITUTION:A copper film shaped through electroless plating is thermally treated at 500-700 deg.C in an inert gas atmosphere having oxygen partial pressure of 10<-15>ppm or 10<-6>ppm and turned into an electrode. A baking device 6 controls conditions by an inert gas bomb (hereinafter called a bomb) 7 supplying a baking furnace 9 with an inert gas, the baking furnace 9 baking the electrode on ceramics, a silicone tube 8 connecting the bomb 7 and the baking furnace 9 and feeding the inert gas, and an oxygen partial pressure gage 10 measuring oxygen partial pressure in the baking furnace. Accordingly, the copper film is baked positively, thus elevating Q, then improving reliability.

Inventors

• 👤 Tatsuya Kikuchi
• 👤 菊池　竜哉
• 👤 Masaaki Taniguchi
• 👤 谷口　雅朗
• 👤 Shinichi Shikauchi
• 👤 鹿内　伸一
• 👤 Kaneo Mori
• 👤 金男 森
• 👤 Masahiro Yahagi
• 👤 正博 矢作

Bibliographic Details