Semiconductor laser array and optical disk device

Abstract

Abstract PURPOSE:To increase condensing accuracy on a track of beams and improve characteristics of recording and reproduction by having a plurality of oscillation regions which are driven independently one another and having at least two oscillation regions such as one region having a narrow width and other one having a broad width among a plurality of oscillation regions. CONSTITUTION:A semiconductor laser array has an AlGaAs active layer 3 as an oscillation region which is placed between n-type GaAs block layers 5 and is located directly below its array and is separated into three oscillation regions 8, 9, and 10 by separating grooves 11 and they are driven independently. Respective oscillation regions are limited by widths W of the n-type GaAs block layers 5, tor example, the oscillation regions 8 and 9 are used by light output 30mW under each width 4mum and then the oscillation region 10 is used by light output 3mW under its width 6mum. Each wave length in the case of light output 30 mw when they are used at the oscillation regions 8 and 9 is 7740Angstrom and is almost equal to that in the case of light output 3mW when it is used at the oscillation region 10. Uniform wave lengths in movements are thus obtained at a semiconductor laser array.

Inventors

• 👤 Kenji Endo
• 👤 健司 遠藤

Bibliographic Details