Method of operating plasma apparatus and plasma apparatus

Abstract

Abstract PURPOSE:To improve an etched shape, an etching speed and a film forming speed by a method wherein a pressure in a plasma generating chamber is maintained equal to or lower than a pressure in a sample chamber during the operation of a plasma apparatus. CONSTITUTION:An exhaust outlet 3a linked with an exhauster is opened in the bottom wall of a sample chamber 3 which faces a plasma drawing-out window 1d. Further, inside the sample chamber 3, a sample table 7 facing the plasma drawing-out window 1d is provided directly below the window 1d. The opening area of the plasma drawing-out window 1d is so selected as to be not larger than 50% of the cross-sectional area of a plasma generating chamber 1. A sample S is placed on the sample table 7 in the sample chamber 3 and, after vacuum degrees of the plasma generating chamber 1 and the sample chamber 3 are set at required values, raw gas, is introduced into the sample chamber 3 through a gas supply system 3g to maintain the pressure of the plasma generating chamber 1 equal to or lower than the pressure of the sample chamber 3. In this state, the gas in the plasma generating chamber 1 is ionized and a plasma is generated.

Inventors

• 👤 Hironori Araki
• 👤 宏典 荒木
• 👤 Toshihide Suehiro
• 👤 末廣　利英
• 👤 Toshiki Ehata
• 👤 敏樹 江畑
• 👤 Takayuki Tani
• 👤 谷　隆之

Bibliographic Details