Semiconductor integrated circuit device and manufacture thereof

Abstract

Abstract PURPOSE:To take a contact while leaving a titanium silicide film in a contact section, and to form the contact having low resistance by coating the surface of the titanium silicide film with a tungsten silicide film, a molybdenum silicide film or a cobalt silicide film. CONSTITUTION:The diffusion layer section of a semiconductor integrated circuit device is composed of a P-type Si substrate 10, a silicon oxide film 11 for element isolation, an N<+> diffusion layer 12, a titanium silicide film 13, a tungsten silicide film 14, an inter-layer insulating film 15 consisting of a silicon oxide film, a tungsten titanate film 16 and an aluminum film 17 containing silicon. A contact hole is formed to one part of the inter-layer insulating film 15, and the tungsten silicide film 14 is not removed even when hydrofluoric acid treatment is executed for removal of the silicon film leaving on the tungsten silicide film 14; thus, an excellent contact is taken between the tungsten titanate 16 and the tungsten silicide 14 to provide the device having superior element characteristics.

Inventors

• 👤 Koji Yamazaki
• 👤 孝二 山崎

Bibliographic Details