Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To inhibit the generation of a crack in an SOG layer, and to equalize inter-layer dielectric strength by using a coated insulating film composed of an organic silicon compound containing a methyl group and oxygen as a coating insulating film and curing the coating insulating film by introducing active nitrogen to the coating insulating film. CONSTITUTION:An SOG layer 5 consisting of the organic compound of Si containing a CH3 group and O is formed onto a first PSG film 4 in the thickness of an extent that a stepped section corresponding to the thickness of a lower- layer Al wiring 3 is buried and the thickness of approximately 0.5mum can be ensured in the upper region of the lower-layer Al wiring 3, the substrate is inserted into a barrel type plasma treater, and curing by the active-N2 introduction of the SOG layer 5 is conducted by nitrogen plasma. The CH3 groups included in SOG are roplaced with N by the plasma nitriding treatment. A second PSG film 6 in the thickness of approximately 0.5mum is shaped onto the SOG layer 5 through a CVD method in order to hold dielectric strength. Accordingly, an oxidation polymerization reaction is not generated and high molecules are not formed even when SOG is brought into contact with O2 plasma, thus preventing the generation of cracks.

Inventors

• 👤 Taku Inagaki
• 👤 稲垣　卓

Bibliographic Details