Method of erasing memory, method of programming memor and method of erasing and programming memory

Abstract

Abstract PURPOSE: To program a flash memory device via a data port and to enable an erasing command port architecture by incorporating a circuit means into the same semiconductor chip as a memory executing erasing, programming and erasing/programing test in a circuit. CONSTITUTION: A program command is inputted into a condition resistor 35 and command resistor 37 in a first cycle of writing enable signals WE. An address latch 13 and data latch 22 are loaded in a second WE cycle. The first transition end of the second WE cycle is started to program by generating control signals to a program voltage generator 25 with a condition decoder 36. Next, a high voltage VPP is applied to a gate and drain of an addressed cell of a memory array 11 with the program voltage generator 25. Programming is finished by writing a program test command into the condition resistor 35 and the command resistor 37 in a third WE cycle, and an internal limit voltage is set in order to test a newly programed bit.

Inventors

• 👤 Jerry A Kreifels
• 👤 ジエリイ・エイ・クライフエルス
• 👤 Alan Baker
• 👤 アラン・ベーカー
• 👤 George Hoekstra
• 👤 ジヨージ・ヘクストラ
• 👤 Virgil N Kynett
• 👤 ヴアージル・ナイルス・キネツト
• 👤 Steven Wells
• 👤 ステイーヴン・ウエルズ
• 👤 Mark Winston
• 👤 マーク・ウインストン

Bibliographic Details