Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To flatten an insulating material without deteriorating characteristics thereof and to make continuous contact possible while ensuring a required thickness for interconnections by providing first and second interconnections such that the interconnections surround the insulating material buried in a contact hole. CONSTITUTION:On the surface of a semiconductor substrate 1, there are formed a silicon oxide film 2, polysilicon interconnection 3 and a silicon oxide film 4. The structure is etched by the RIE process to open a contact hole 5. Aluminum is deposited on the wholse surface by sputtering to form a first conductor film 6a. Spin-on glass 7a is applied thereon to a thickness larger than the depth of the contact hole 5. The spin-on glass on the surface is then removed by ion etching such that only the glass within the contact hole 5 is left unetched. Aluminum is then deposited on the whole surface to provide a second conductor film 8a. The first and second conductor films 6a and 8a are patterned into the same pattern to provide first and second interconnection layers 6b and 8b.

Inventors

• 👤 Masayuki Yoshida
• 👤 正之 吉田

Bibliographic Details