Plasma etching device

Abstract

Abstract PURPOSE:To lessen generation of contamination and to improve generation efficiency of plasma by arranging a graphite board where silicide is attached to the surface in an electrode, as a gas introduction part. CONSTITUTION:A gas introduction part 2 is to introduce gas Which is let flow through a gas pipe 1 into between an electrode 4 and an electrode 6, and it consists of graphite board where silicide 3 is attached to the surface. And the gas which flowed in is introduced from the gas introduction part 2 to between the electrode 4 and the electrode 6, and by supplying high frequency power from a high frequency power source 7, the introduced gas is made into plasma so as to plasma-etch a substance 5 to be processed which is placed on the electrode 6. As the graphite board where silicified silicide 3 is attached to the surface is used as the gas introduction part 2, even if it is exposed to the plasma, there is no metallic contamination source such as aluminium, and plasma which is stable and in high density can be generated efficiently and favorably.

Inventors

• 👤 Tsutomu Tsukada
• 👤 勉 塚田
• 👤 Tatsuo Asamaki
• 👤 麻蒔　立男

Bibliographic Details