Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device having high reliability by disposing a coating layer of aluminum on the upper and lower sides of a main conductive layer, and forming wirings in the device. CONSTITUTION:A wiring layer L1 of first layer is formed of a main conductive layer 3 having an essential part of its conductive section made of copper, and coating layers 4 disposed on the upper and lower sides of the layer 3 and made of aluminum. An intermediate layer 5 in which the composition ratio of the copper to the aluminum is continuously varied is interposed between the layers 3 and 4. Then, the influences of an electromigration and a straight migration, etc., are eliminated. Accordingly, an electric contact instability brought by diffusing the copper in semiconductor is overcome. Thus, a semiconductor device having high reliability is obtained.

Inventors

• 👤 Hideki Tsuya
• 👤 津谷　英喜

Bibliographic Details