Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To avoid the discontinuity of a second wiring metal layer by a method wherein a first wiring metal layer is etched to the intermediate depth except the parts to be in contact with the second wiring metal layer and then the first wiring metal layer is patterned by etching and then an interlayer insulating film is built up. CONSTITUTION:Resist 5 is applied to a first wiring metal layer 1 and patterned by a photolithography process and the first wiring metal layer 1 is etched with the resist pattern 5 as a mask and the resist 5 is removed. Then the first wiring metal layer 1 is etched with a resist pattern 6 applied to the first wiring metal layer 1 as a mask and the resist 6 is removed. Further, after as interlayer insulating film 2 is built up on the first wiring metal layer 1 so as to have its thickness approximately equal to the heights of the column parts of the first wiring metal layer 1, a second wiring metal layer 4 is built up. With this constitution, the second wiring metal layer 4 can be built up without discontinuity.

Inventors

• 👤 Atsuhiko Ikeda
• 👤 池田　敦彦

Bibliographic Details