Semiconductor device

Abstract

Abstract PURPOSE:To obtain a highly reliable device even if a poly Si layer is formed thinly by a method wherein an amorphous Si layer is interposed between the poly Si layer and an Si oxide layer. CONSTITUTION:A field oxide film 2 and p<+> element isolation regions 3 are formed on a p-type Si substrate 1, and thereafter, an oxidation is performed to form a gate oxide film 4 on the whole surface, an amorphous Si layer 5 is formed and, moreover, a poly Si layer 6 is formed. Then, the layers 6 and 5 are patterned to form a gate electrode 7 and an n-type impurity is ion- implanted using the electrode 7 as a mask to form a source and a drain 8. Then, an Si dioxide layer 9 is formed on the whole surface, apertures for leading out source and drain electrodes are formed and an Al film is formed on the whole surface and is patterned to form the source and drain electrodes 10. Accordingly, by interposing the layer 5 having no grain boundary between the layers 6 and 4, the film 4 is protected from a chemical at the time of patterning.

Inventors

• 👤 Junichi Ishikawa
• 👤 順一 石川
• 👤 Akinao Ogawa
• 👤 小川　明直

Bibliographic Details