Semiconductor light amplifier

Abstract

Abstract PURPOSE:To obtain a semiconductor light amplifier in which gain saturation is hard to occur and amplification efficiency is excellent, by increasing the cross sectional area of a light amplifier part, which is perpendicular to a light guide in the travelling-wave type semiconductor amplifier, toward a light emitting end surface from the incident edge face of light. CONSTITUTION:A light guide comprising an active layer 3 and a clad layer 5 is formed on a semiconductor substrate 1 in a travelling wave type semiconductor light amplifier. In this amplifier, the area or the cross section of a light amplifier part, which is perpendicular to said light guide, is increased toward a light emitting end surface from an incident end surface of the light. For example, an N-InP buffer layer 2, an InGaAsP active layer 3, an InGaAsP anti-melt-back layer 4 and P-InP clad layer 5 are grown on the N-InP substrate 1 as crystals. Thereafter, two radial grooves 6 and 7 are formed in the direction of [110], and a mesa stripe 8 is formed between the grooves 6 and 7. Then, a P-InP current blocking layer 9 and an N-InP current blocking layer 10 are formed at a part other than the upper part of the mesa stripe 8. A P-InP embedded layer 11 and a P<+>-InGaAsP contact layer 12 are grown on the entire surface as crystals.

Inventors

• 👤 Nitsushiyun Kuruma
• 👤 車　日▲じゅん▼

Bibliographic Details