Semiconductor laser

Abstract

Abstract PURPOSE: To obtain a semiconductor laser formed with a strip having a tapered by part diffusing an impurity in one surface of a plurality of semiconductor substance layers containing active region. CONSTITUTION: Mirror surfaces 102, 104 are formed on a plurality of semiconductor substance layers containing an active region 204. An impurity is diffused in one surface of the semiconductor substance layer, thereby forming a strip 108 with taper. The narrow width part 120 of the strip is controlled in lateral mode, the wide parts 116, 118 provide low current density threshold value for laying, thereby enabling to operate with high output power. The tapered part can prevent the conversion of fundamental transverse mode to high order mode. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Ii Akurei Donarudo

Bibliographic Details