Vacuum arc deposition method

Abstract

Abstract PURPOSE:To obtain a high quality film contg. no molten particles and having superior strength and durability by vacuum arc deposition by specifying the surface temp. of the cathode and the partial pressure of introduced gas and by forming a film on a substrate while forming a compd. having a high m.p. CONSTITUTION:Plasma particles are generated from an evaporating source (cathode) 2 in a vacuum chamber 1 by vacuum arc discharge and deposited on a substrate 8. In this vacuum arc deposition method, the surface of the cathode 2 is kept at 200 deg.C-the m.p. of the cathode material and the partial pressure of introduced gas for forming a compd. having a high m.p. is regulated to >=1X10<-4>Torr. A film is formed on the substrate 8 while forming the compd. on the surface of the cathode 2.

Inventors

• 👤 Hiroshi Tamagaki
• 👤 浩 玉垣

Bibliographic Details