Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the disconnection of a gate electrode wiring and an Al wiring in a post-process, and to manufacture a semiconductor device, in which an element isolation region using a LOCOS method is formed, by flattening a section on the element isolation region and removing a stepped section. CONSTITUTION:An opening section is shaped into an Si substrate 1 in a field section through anisotropic dry-etching, and a field oxide film 2 is formed through wet oxidation. Two layer films composed of an SiO2 film and an Si3N4 film are removed through wet-etching. A bird head 3 is formed to the field oxide film 2 under the state. Spin-on-glass 4 containing boron is applied onto the whole surface of the semiconductor substrate 1. Lastly, the spin-on-glass 4 containing boron and the field oxide film 2 are etched back until the semiconductor substrate 1 is exposed through wet-etching. Accordingly, the bird head 3 shaped to the field oxide film 2 is removed, and an element isolation region is flattened.

Inventors

• 👤 Fumihiko Inoue
• 👤 文彦 井上

Bibliographic Details