Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To suppress a short channel effect due to channeling in the lateral direction, by a method wherein an element for making a substrate amorphous, which is inactive in relation to the substrate, is ion-implanted obliquely to a normal line of the main surface of the substrate. CONSTITUTION:An opening is formed selectively in a protection film 9 on a single crystal semiconductor substrate 1. An element Si being inactive in relation to the substrate 1 is ion-implanted selectively through the opening, so as to make amorphous the surface of the substrate 1 selectively (a first ion implantation process). A required impurity B<+> is ion-implanted in the region made amorphous, through the opening (a second ion implantation process). In the first ion implantation process, an inclination to a normal line of the main surface of the substrate 1 is set to be larger than that in the second ion implantation process. Then even crystals under the end part of the opening of the mask 9 are made amorphous sufficiently. Thereby a short channel effect due to channeling in the lateral direction is suppressed.

Inventors

• 👤 Tetsuo Izawa
• 👤 哲夫 伊澤
• 👤 Haruhisa Mori
• 👤 森　治久

Bibliographic Details