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FR2367352A1 Expired / Lapsed FR ⏱️ 0.0 years remaining

DIGITAL MEMORY

Assignee: Westinghouse Electric Corp
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Filing: 1977-10-07
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Granted: —
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Expires: 1997-10-07
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Abstract

Abstract Translated from French a. Circuit intégré comprenant une première et une seconde régions semi-conductrices isolées l'une de l'autre par une jonction de type PN et portées par un substrat commun. b. Circuit camcterisé en ce qu'il comporte un ensemble de transistors de mémoire utilisant la première région semiconductrice comme substrat, uncircuit logique ayant comme substrat la seconde région, le circuit logique répondant aux signaux d'entrée de façon que le substrat des transistors de memoire soit couplé à un ensemble de potentiels pour la sélection des combinaisons de ces signaux. at. Integrated circuit comprising a first and a second semiconductor regions isolated from each other by a PN-type junction and carried by a common substrate. b. Circuit camcterized in that it comprises a set of memory transistors using the first semiconductor region as a substrate, a logic circuit having the second region as a substrate, the logic circuit responding to the input signals so that the substrate of the memory transistors is coupled to a set of potentials for the selection of combinations of these signals.

Inventors

No inventors recorded.

Bibliographic Details

Application Number —
Jurisdiction FR
Data Source google_patents
Last Synchronized 2026-11-05 18:50
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/14; G11C16/16; G11C16/04; G11C16/0466; G11C7/00; G11C7/20; H; H10; H10B; H10B99/00; H10B99/22; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D88/00

Claims Analysis

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References Cited (Backward Citations)

GB1163568A Cited

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