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FR1535286A Expired / Lapsed FR ⏱️ 0.0 years remaining

Field effect metal oxide semiconductor transistor and method of manufacturing same

Assignee: General Micro Electronics Inc
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Filing: 1967-08-29
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Granted: 1968-08-02
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Expires: 1987-08-29
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Abstract

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Bibliographic Details

Application Number —
Jurisdiction FR
Data Source google_patents
Last Synchronized 2026-10-27 17:02
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D64/00; H10D64/60; H10D64/62; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038; H10D99/00; H10P; H10P76/00; H10P76/40; H10P95/00

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