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Patent FR1122216A successfully refreshed from Google Patents.
FR1122216A
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Method of forming p-n junctions in semiconductor materials
Assignee: International Business Machines Corp
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Filing: 1953-04-16
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Granted: 1956-09-04
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Expires: 1973-04-16
Abstract
No abstract record available.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
FR
Data Source
google_patents
Last Synchronized
2026-11-01 16:27
CPC Classifications
H; H10; H10P; H10P50/00; C; C30; C30B; C30B9/00; H10D; H10D62/00; H10D62/01; H10P10/00; H10P10/12; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/38; H10P14/3802; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; H10P95/50
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