Patent EP1209747A2 successfully refreshed from Google Patents.
EP1209747A2
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Semiconductor memory element
Assignee: Hitachi Ltd
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Filing: 1996-01-26
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Granted: —
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Expires: 2016-01-26
Abstract
Abstract A semiconductor memory element comprises a semiconductor film (1) formed on a substrate, two low-resistance regions (102, 103) coupled with end portions of the semiconductor film, and a control electrode (104) for applying an electric field to the semiconductor film. The element is formed as a one-transistor memory cell in which information is stored by a change in threshold voltage due to charge carrier trapping. The semiconductor film (1) includes a plurality of strips (101) interconnecting the low-resistance regions (102, 103) and being controlled by a common control electrode (104). The control electrode (104) covers the entirety of the semiconductor film strips (101). A second control electrode may be provided for applying an electric field to the semiconductor film.
Inventors
- 👤 Tomoyuki Ishii
- 👤 Kazuo Yano
- 👤 Koichi Seki
- 👤 Toshiyuki Mine
- 👤 Takashi Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/687; H10B; H10B69/00; H10D30/681; H10D30/683; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10D86/00; H10D86/201; Y; Y10; Y10S; Y10S438/00; Y10S438/962
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
107 words
A semiconductor memory element comprising: a semiconductor film (1) formed on a substrate, two low-resistance regions (102, 103) coupled with end
portions of said semiconductor film, a control electrode (104) for applying an electric field
to said semiconductor film, the element being formed as a one-transistor memory cell
in which information is stored by a change in threshold voltage
due to charge carrier trapping, characterised in that said semiconductor film (1) includes
a plurality of strips (101) interconnecting said low-resistance
regions (102, 103) and being controlled by a common
control electrode (104), said control electrode (104)
covering the entirety of said semiconductor film strips
(101). (Fig. 16)
Claim 2
Dependent Claim
107 words
A semiconductor memory element comprising: a semiconductor film (1) formed on a substrate, two low-resistance regions (102, 103) coupled with end
portions of said semiconductor film, a control electrode (104) for applying an electric field
to said semiconductor film, the element being formed as a one-transistor memory cell
in which information is stored by a change in threshold voltage
due to charge carrier trapping, characterised in that said semiconductor film (1) includes
a plurality of strips (101) interconnecting said low-resistance
regions (102, 103) and being controlled by a common
control electrode (104), said control electrode (104)
covering the entirety of said semiconductor film strips
(101). (Fig. 16)
Claim 3
Dependent Claim
25 words
The memory element of claim 1, further comprising a second
control electrode (120) for applying an electric field to
said semiconductor film (117). (Fig. 18)
Claim 4
Dependent Claim
111 words
A semiconductor memory element comprising: a semiconductor film (1; 117) formed on a substrate, two low-resistance regions (2, 3; 102, 103) coupled with
end portions of said semiconductor film (1; 117), a first control electrode (4) for applying an electric
field to said semiconductor film (1; 117), the element being formed as a one-transistor memory cell
in which information is stored by a change in threshold voltage
due to charge carrier trapping, characterised in
that the first control electrode (4) covers the entirety
of said semiconductor film (1; 117) and that a second control electrode (120) is provided for
applying an electric field to said semiconductor film. ( Fig.
18 )
Claim 5
Dependent Claim
111 words
A semiconductor memory element comprising: a semiconductor film (1; 117) formed on a substrate, two low-resistance regions (2, 3; 102, 103) coupled with
end portions of said semiconductor film (1; 117), a first control electrode (4) for applying an electric
field to said semiconductor film (1; 117), the element being formed as a one-transistor memory cell
in which information is stored by a change in threshold voltage
due to charge carrier trapping, characterised in
that the first control electrode (4) covers the entirety
of said semiconductor film (1; 117) and that a second control electrode (120) is provided for
applying an electric field to said semiconductor film. ( Fig.
18 )
Claim 6
Dependent Claim
33 words
The memory element of claim 3, wherein said semiconductor
film includes a plurality of strips (101) interconnecting
said low-resistance regions (102, 103) and being controlled
by a common control electrode (104). (Fig. 16)
Claim 7
Dependent Claim
25 words
The memory element of claim 1, wherein said semiconductor
film (1; 117) is made of polycrystalline silicon having a
thickness of 5 nm or less.
Claim 8
Dependent Claim
21 words
The memory element of any preceding claim, wherein said
low-resistance regions (2, 3; 102, 103) are formed over an
insulator (6).
Claim 9
Dependent Claim
25 words
The memory element of any preceding claim, wherein said
low-resistance regions (2, 3; 102, 103) are connected with a
wiring line of an another layer.
Claim 10
Dependent Claim
22 words
The memory element of any preceding claim, wherein said
semiconductor film has a laterally projecting portion extending
parallel to the substrate surface.
Claim 11
Dependent Claim
19 words
The memory element of any preceding claim, wherein said
semiconductor film (1; 117) is formed over an insulator (6).
Claim 12
Dependent Claim
16 words
The memory element of claim 5 or 8, wherein said insulator
(6) is made of nitride.
Claim 13
Dependent Claim
23 words
The memory element of any preceding claim, wherein the
memory region is located in said semiconductor film (1; 117)
as a low-potential region.
Claim 14
Dependent Claim
23 words
The memory element of any one of claims 1 to 10, wherein
the memory region is separate from said semiconductor film
(1; 117).
References Cited (Backward Citations)
No citation records indexed.
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