Patent EP1205574A2 successfully refreshed from Google Patents.
EP1205574A2
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Atomic layer deposition of Ta205 and high-K dielectrics
Assignee: Applied Materials Inc
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Filing: 2001-11-09
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Granted: —
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Expires: 2021-11-09
Abstract
Abstract Methods of forming compound thin films through atomic layer deposition using high-k dielectric Group VB species are described. A substrate is placed in a reaction chamber. A first reactant gas of a Group VB element is injected into the reaction chamber where it is chemisorbed as an atomic layer on the substrate surface. A second reactant gas, when injected into the reaction chamber, flows over the atomic layer of the first reactant gas and forms an atomic layer on the atomic layer of the first reactant gas. This process can be repeated, alternately subjecting the surface to the first reactant gas and the second reactant gas, until the compound thin film reaches the desired thickness. A purge gas is injected into the reaction chamber between two successive reactant gas injections to purge the chamber of any excess, or unreacted, reactant gas.
Inventors
- 👤 Jallepally Ravi
- 👤 Alain Duboust
- 👤 Shih-Hung Li
- 👤 Kevin Song
- 👤 Robert B. Majewski
- 👤 Liang-Yuh Chen
- 👤 Daniel A. Carl
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H; H10; H10P; H10P14/00; H10P14/20; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C23C16/40; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45553; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69397
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
133 words
A method of forming and growing a
stoichiometric, high-k dielectric thin film on a surface
of a substrate, the method comprising: placing the substrate in a reaction chamber; forming a single atomic layer of a first reactant
on the substrate surface by subjecting the substrate
surface to the first reactant, wherein the first
reactant comprises tantalum and wherein the first
reactant is in a vapor phase; purging the chamber of unreacted first reactant;
forming a single atomic layer of a second reactant on
the substrate surface by subjecting the substrate
surface to the second reactant, wherein the second
reactant is in a vapor phase; and purging the chamber of unreacted second reactant;
alternately subjecting the substrate surface to the
reactants in the vapor phase until the formed thin film
reaches a desired thickness.
Claim 2
Dependent Claim
38 words
The method of Claim 1, wherein the first
reactant is or comprises one or more of Ta(OC 2 H 5 ) 5 ,
[(CH 3 CH 2 ) 2 N] 3 Ta, TaCl 5 and TaF 5 .
Claim 3
Dependent Claim
25 words
The method of Claim 1 or Claim 2, wherein the
second reactant is or comprises one or more of oxygen
radicals, ozone and water vapor.
Claim 4
Independent Claim
25 words
The method of any one of Claims 1 to 3,
wherein the purge gas is or comprises one or more of
argon, nitrogen and helium.
Claim 5
Independent Claim
25 words
The method of any one of Claims 1 to 4,
wherein the chamber has a pressure of from about 0.1
Torr to about 500 Torr.
Claim 6
Independent Claim
33 words
The method of any one of Claims 1 to 5,
wherein the thin film is or comprises one or both of
Ta 2 O 5 and Ta x O y N z .
Claim 7
Dependent Claim
31 words
The method of Claim 6, wherein the thin film
is or comprises Ta 2 O 5 , and the first reactant is or
comprises Ta(OC 2 H 5 ) 5 .
Claim 8
Dependent Claim
33 words
The method of Claim 6, wherein the thin film
is or comprises Ta 2 O 5 , and the first reactant is or
comprises [(CH 3 CH 2 ) 2 N] 3 Ta.
Claim 9
Dependent Claim
27 words
The method of Claim 6, wherein the thin film
is or comprises Ta 2 O 5 , and the first reactant is or
comprises TaCl 5 .
Claim 10
Dependent Claim
27 words
The method of Claim 6, wherein the thin film
is or comprises Ta 2 O 5 , and the first reactant is or
comprises TaF 5 .
Claim 11
Dependent Claim
35 words
The method of Claim 6, wherein the thin film
is or comprises Ta x O y N z , and the first reactant is or
comprises [(CH 3 CH 2 ) 2 N] 3 Ta.
Claim 12
Independent Claim
100 words
The method of any one of Claims 1 to 11,
further comprising, after the step of purging the
chamber of unreacted second reactant: forming a single atomic layer of a third reactant
on the substrate surface by subjecting the substrate
surface to the third reactant, wherein the third
reactant is in a vapor phase; purging the chamber of unreacted third reactant;
forming a single atomic layer of a fourth reactant on
the substrate surface by subjecting the substrate
surface to the fourth reactant, wherein the fourth
reactant is in a vapor phase; and purging the chamber of unreacted fourth reactant.
Claim 13
Dependent Claim
15 words
The method of Claim 12, wherein the thin
film is or comprises TaAlO 4 .
Claim 14
Dependent Claim
22 words
The method of Claim 12 or Claim 13, wherein
the first reactant is or comprises Ta(OC 2 H 5 ) 5 .
Claim 15
Dependent Claim
24 words
The method of Claim 12 or Claim 13, wherein
the first reactant is or comprises [(CH 3 CH 2 ) 2 N] 3 Ta.
Claim 16
Dependent Claim
18 words
The method of Claim 12 or Claim 13, wherein
the first reactant is or comprises TaCl 5 .
Claim 17
Dependent Claim
18 words
The method of Claim 12 or Claim 13, wherein
the first reactant is or comprises TaF 5 .
Claim 18
Independent Claim
27 words
The method of any one of claims 6 to 17,
wherein the second reactant is or comprises one or
more of oxygen radicals, ozone and water vapor.
Claim 19
Independent Claim
29 words
The method of any one of claims 12 to 18,
wherein the the third reactant is or comprises one or
more of trimethyl aluminum, dimethyl aluminum and
isopropoxy aluminum.
Claim 20
Independent Claim
27 words
The method of any one of claims 12 to 19,
wherein the fourth reactant is or comprises one or
more of oxygen radicals, ozone and water vapor.
Claim 21
Independent Claim
21 words
The method of any one of claims 12 to 20,
wherein the second reactant is the same as the fourth
reactant.
References Cited (Backward Citations)
No citation records indexed.
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