Patent US4526480A successfully refreshed from Google Patents.
Patent EP1119035A2 successfully refreshed from Google Patents.
EP1119035A2
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Method for depositing a low dielectric constant film
Assignee: Applied Materials Inc
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Filing: 2000-11-29
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Granted: —
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Expires: 2020-11-29
Abstract
Abstract The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally labile groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.
Inventors
- 👤 Robert P. Mandal
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 14:41
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/56; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/056; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/665; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; Y; Y10; Y10T; Y10T428/00; Y10T428/249921; Y10T428/249953; Y10T428/249967; Y10T428/249969; Y10T428/249976; Y10T428/249978; Y10T428/249994
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
78 words
A method for depositing a low dielectric constant film, comprising: introducing one or more compounds comprising at least one oxidizable silicon containing
component and at least one non-silicon containing molecular component having thermally labile
groups into a processing chamber; reacting the one or more compounds with an oxidizing gas at a temperature that retains
the labile groups in a conformal layer; and annealing the conformal layer at a temperature sufficient to convert the labile groups to
dispersed voids.
Claim 2
Dependent Claim
101 words
The method of claim 1 comprising: depositing a conformal lining layer on a substrate having a patterned metal layer from
process gases comprising one or more reactive silicon containing compounds and an oxidizing
gas; introducing one or more compounds comprising at least one oxidizable silicon containing
component and at least one non-silicon containing component having thermally labile groups
into a processing chamber; reacting the one or more compounds with an oxidizing gas at a temperature that retains
the labile groups in a conformal layer; and annealing the conformal layer at a temperature sufficient to convert the labile groups to
dispersed voids.
Claim 3
Dependent Claim
27 words
The method of claim 1 or 2, wherein one or more compounds comprise methylsiloxy
(CH 3 -SiH 2 -O-) or dimethylsiloxy ((CH 3 ) 2 -SiH-O-) components.
Claim 4
Dependent Claim
18 words
The method of claim 1 or 2, wherein the one or more compounds comprise multiply unsaturated
cycloalkene components.
Claim 5
Dependent Claim
32 words
The method of claim 4, wherein the multiply unsaturated cycloalkene components are
selected from the group consisting of dioxinyl (-(-CH=CH-O-CH=CH-O-)-), furanyl (-(-CH=CH-CH=CH-O-)-),
fulvenyl (-(-CH=CH-CH=CH-C(CH 2 )-)-), and fluorinated carbon derivative
groups thereof.
Claim 6
Dependent Claim
65 words
The method of claim 1 or 2, wherein the one or more compounds are selected from a
group consisting of methylsilyl-1,4-dioxinyl ether, 2-methylsiloxanyl furan, 3-methylsiloxanyl
furan, 2,5-bis(methylsiloxy)-1,4-dioxin, 3,4-bis(methylsiloxanyl) furan, 2,3-bis(methylsiloxanyl)
furan, 2,4-bis(methylsiloxanyl) furan, 2,5-bis(methylsiloxanyl) furan, 1-methylsiloxanylfulvene,
2-methylsiloxanylfulvene, 6-methylsiloxanylfulvene, bis(methylsiloxanyl)fulvene, dimethylsilyl-1,4-dioxinyl
ether, 2-dimethylsiloxanyl furan, 3-dimethylsiloxanyl furan, 2,5-bis(dimethylsiloxy)-1,4-dioxin,
3,4-bis(dimethylsiloxanyl) furan, 2,3-bis(dimethylsiloxanyl) furan,
2,4-bis(dimethylsiloxanyl) furan, 2,5-bis(dimethylsiloxanyl) furan, 1-dimethylsiloxanylfulvene,
2-dimethylsiloxanylfulvene, 6-dimethylsiloxanylfulvene, bis(dimethylsiloxanyl)fulvene,
fluorinated carbon derivatives thereof, and combinations thereof.
Claim 7
Dependent Claim
33 words
The method of claim 1 or 2, wherein the one or more compounds further comprise a non-thermally-labile-imparting
compound having a non-planar ring structure selected from the group
consisting of 2,4,6-trisilaoxane and cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene.
Claim 8
Dependent Claim
56 words
The method of claim 1 or 2, wherein the one or more compounds further comprises a
non-silicon containing thermally-labile-imparting compound selected from a group consisting of
vinyl-1,4-dioxinyl ether, vinyl furyl ether, vinyl-1,4-dioxin, vinyl furan, methyl furoate, furyl
formate, furyl acetate, furaldehyde, difuryl ketone, difuryl ether, difurfuryl ether, furan, 1,4- dioxin,
fluorinated derivatives thereof, and combinations thereof.
Claim 9
Dependent Claim
43 words
The method of claim 1, 2 or 8, wherein the one or more compounds further comprise a
silicon containing compound selected from a group consisting of methylsilane, dimethylsilane,
disilanomethane, bis(methylsilano)methane, 2,4,6-trisilaoxane,, 1,3,5-trisilaecyclohexane, cyclo-1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene,
1,3 -dimethyl-disiloxane, 1,1,3,3-tetramethyldisiloxane,
1,1,5,5-tetramethyltrisilaoxane, 1,1,3,5,5-pentamethyltrisilaoxane, and fluorinated
carbon derivatives thereof.
Claim 10
Dependent Claim
44 words
The method of claim 1 or 2, wherein the one or more compounds comprise a non-thermally-labile-imparting
chemical component selected from the group consisting of 2,4,6-trisilaoxane
and cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene, and a thermally-labile-imparting
chemical component selected from the group consisting of methylsilyl-1,4-dioxinyl
ether and methylsiloxanyl furan.
Claim 11
Dependent Claim
45 words
The method of claim 1 or 2, further comprising the step of depositing a capping layer on
the low k dielectric film, the capping layer material is selected from a group consisting of silicon
nitride, silicon oxide, silicon oxynitride, hydrogenated silicon carbide, and combinations thereof.
Claim 12
Dependent Claim
35 words
The method of claim 1 or 2, wherein the dispersed voids are formed by annealing the
substrate using a temperature profile that gradually rises to a final temperature of between about
350°C and about 400°C.
Claim 13
Independent Claim
142 words
A method of forming a dual damascene structure, comprising: depositing a first etch stop on a substrate; depositing a first nano-porous silicon oxide based layer on the first etch stop; depositing a second etch stop on the first silicon oxide based layer; depositing a second nano-porous silicon oxide based layer on the second etch stop; depositing a third etch stop on the second silicon oxide based layer; etching the third etch stop and second nano-porous silicon oxide based layer to define a
vertical interconnect opening; etching the second etch stop, the first nano-porous silicon oxide based layer, and the first
etch stop through the vertical interconnect opening to further define the vertical interconnect,
thereby exposing the substrate, and etching the third etch stop and the second nano-porous silicon
oxide based film to define a horizontal interconnect and form a dual damascene feature.
Claim 14
Dependent Claim
42 words
The method of claim 13, wherein the first and the second silicon oxide based layers comprise
dispersed microscopic voids formed by annealing the substrate using a temperature profile
that gradually rises to a final temperature of between about 350°C and about 400°C.
Claim 15
Dependent Claim
38 words
The method of claim 13, wherein the horizontal interconnect opening is defined by depositing
a patterned oxide layer on the third etch stop prior to etching the third etch stop and the
second nano-porous silicon oxide based layer.
Claim 16
Dependent Claim
38 words
The method of claim 15, wherein the vertical interconnect opening is defined by depositing
a patterned hard mask film on the patterned oxide layer prior to etching the third etch stop
and second nano-porous silicon oxide based layer.
Claim 17
Dependent Claim
17 words
The method of claim 13, further comprising depositing a conformal barrier layer film in
the defined interconnect.
Claim 18
Dependent Claim
16 words
The method of claim 17, further comprising depositing a copper layer on the conformal
barrier layer.
Claim 19
Dependent Claim
15 words
The method of claim 18, further comprising depositing a capping layer on the copper
layer.
References Cited (Backward Citations)
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