Microcap wafer-level package with vias

Abstract

Abstract A microcap wafer-level package [10] is provided in which a micro device [14] is connected to bonding pads [16, 18] on a base wafer [12]. A peripheral pad [20] on the base wafer [12] encompasses the bonding pads [16, 18] and the micro device [14]. A cap wafer [24] is processed to form wells [40, 42] of a predetermined depth in the cap wafer [24]. A conductive material [27, 29] is made integral with the walls [46, 47] of the wells [40, 42] in the cap wafer [24]. The cap wafer [24] has contacts [30,32] and a peripheral gasket [22] formed thereon where the contacts [30,32] are capable of being aligned with the bonding pads [16, 18] on the base wafer [12], and the gasket [22] matches the peripheral pad [20] on the base wafer [12]. The cap wafer [24] is then placed over the base wafer [12] so as to bond the contacts [30, 32] and gasket [22] to the pads [16, 18, 20] and form a hermetically sealed volume [25] within the peripheral gasket [22]. The cap wafer [24] is thinned to form a "microcap" [24]. The microcap [24] is thinned below the predetermined depth until the conductive material [27, 29] is exposed to become conductive vias [26, 28] through the cap wafer [24] to outside the hermetically sealed volume [25].

Inventors

• 👤 Richard C. Ruby
• 👤 Tracy E. Bell
• 👤 Frank S. Geefay
• 👤 Yogesh M. Desai

Bibliographic Details