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EP0973189A2
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A method for gate-stack formation including a high-K dielectric
Assignee: Texas Instruments Inc
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Filing: 1999-07-13
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Granted: —
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Expires: 2019-07-13
Abstract
Abstract A gate stack (104) including a gate dielectric with reduced effective electrical thickness. A thin (e.g., ∼ 15 Angstroms) silicon dioxide layer is formed on a substrate (102). Remote plasma nitridation of the silicon dioxide layer is performed to create a silicon-oxynitride layer (106) that is resistant to oxidation. A oxygen-containing high-K dielectric (108) is formed over the silicon-oxynitride layer (106) without additional oxidation of the layer (106). The gate electrode (110) is then formed over the high K dielectric (108).
Inventors
- 👤 Sunil V. Hattangady
- 👤 George A. Brown
- 👤 Malcom J. Bevan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 19:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10P; H10P10/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6532; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
87 words
A method of fabricating an integrated circuit comprising: forming a silicon dioxide layer over a semiconductor body; subjecting said silicon dioxide layer to a remote plasma
nitridation for converting said silicon dioxide layer to a
silicon-oxynitride layer; forming a high-k dielectric layer over said silicon-oxynitride
layer, said high-K dielectric layer having a
dielectric constant greater than 10; forming a metal layer over said high-K dielectric layer;
and patterning and etching said metal layer, said high-K
dielectric layer, and said silicon oxynitride layer to form a
gate stack.
Claim 2
Dependent Claim
27 words
The method of claim 1, wherein said step of forming said
silicon dioxide layer comprises forming a silicon dioxide layer
having a thickness less than 20 Angstroms.
Claim 3
Dependent Claim
40 words
The method of claim 1 or Claim 2, wherein said step of
forming said high-k dielectric layer comprises forming a high-K
dielectric layer comprising a material selected from a group of
materials consisting of Ta2O5, BaTiO3, TiO2, CeO2, and BST.
Claim 4
Independent Claim
27 words
The method of any preceding claim, wherein said step of
forming said metal layer comprises forming a metal layer
comprising a tungsten layer overlying a titanium-nitride layer.
Claim 5
Independent Claim
57 words
The method of any preceding claim, wherein said step of
subjecting said silicon dioxide layer to remote plasma
nitridation comprises subjecting said silicon dioxide layer to
remote plasma nitridation using a nitrogen containing precursor
selected from a group consisting of N 2 Stet NH 3 or a mixture
thereof with an inert gas or an oxidizing gas.
Claim 6
Independent Claim
40 words
The method of any preceding claim, wherein said step of
subjecting said silicon dioxide layer to remote plasma
nitridation comprises subjecting said silicon dioxide layer to
remote plasma nitridation at a pressure in the range of 1 to 50
mTorr.
Claim 7
Independent Claim
33 words
The method of any preceding claim, wherein said step of
subjecting said silicon dioxide layer to remote plasma
nitridation comprising a plasma density in the range of 1x10 10 to
1x10 12 .
Claim 8
Independent Claim
31 words
The method of any preceding claim, wherein said step of
subjecting said silicon dioxide layer to remote plasma
nitridation comprising a nitrogen flow in the range of 1 to 100
sccm.
Claim 9
Dependent Claim
62 words
A MOSFET transistor comprising: a multi-layer gate dielectric formedoverlying a
semiconductor body, said multi-layer gate dielectric comprising
a layer of silicon-oxynitride and a layer of an oxygen-containing
high dielectric constant material; a metal stet electrode overlying said multi-layer gate
dielectric; a region on a first side of said gate electrode; and a stet region on a second side of said gate electrode.
Claim 10
Dependent Claim
16 words
The transistor of claim 9, wherein said silicon-oxynitride
layer has a thickness less than 20 Angstroms.
Claim 11
Dependent Claim
28 words
The transistor of claim 9 or claim 10, wherein said high-dielectric
constant layer comprises a material selected from a
group consisting of Ta2O5, BaTiO3, TiO2, CeO2, and BST.
References Cited (Backward Citations)
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