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EP0942459A1
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Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
Assignee: Nichia Corp
•
Filing: 1998-04-09
•
Granted: —
•
Expires: 2018-04-09
Abstract
Abstract A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
Inventors
- 👤 Hiroyuki-Nichia Chemical Industries Ltd. KIYOKU
- 👤 Shuji-Nichia Chemical Industries Ltd. NAKAMURA
- 👤 Tokuya-Nichia Chemical Industries Ltd. KOZAKI
- 👤 Naruhito-Nichia Chemical Industries Ltd. IWASA
- 👤 Kazuyuki-Nichia Chemical Industries Ltd. CHOCHO
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 21:04
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; B; B82; B82Y; B82Y20/00; C23; C23C; C23C16/00; C23C16/04; C23C16/042; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406; H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/3202; H01S5/32025; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/272; H10P14/276; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H01S2301/00; H01S2301/17; H01S2301/173; H01S2304/00; H01S2304/12; H01S5/02; H01S5/0206; H01S5/0213; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/20; H01S5/22; H01S5/2201; H01S5/3211; H01S5/3216; H01S5/34; H01S5/343; H01S5/34333; H10H20/80; H10H20/81; H10H20/817; H10P14/3242; H10P14/3244; H10P14/3248
Claims Analysis
Total Claims: 186
Claim 1
Independent Claim
136 words
A nitride semiconductor growth method
comprising the steps of: (a) forming a first selective growth mask on a
support member made up of a dissimilar substrate made
of a material different from a nitride semiconductor
and having a major surface, and an underlayer made of a
nitride semiconductor formed on the major surface of
the dissimilar substrate, said first selective growth
mask having a plurality of first windows selectively
exposing an upper surface of the underlayer of the
support member; and (b) growing nitride semiconductor portions from
the upper surface portions, of the underlayer, which
are exposed from the windows, by using a gaseous Group
3 element source and a gaseous nitrogen source, until
the nitride semiconductor portions grown in the
adjacent windows combine with each other on an upper
surface of said selective growth mask.
Claim 2
Dependent Claim
43 words
A method according to claim 1, wherein a total
area of upper surfaces of portions, of the underlayer,
which are covered with said first selective growth mask
is larger than that of portions, of the underlayer,
which are exposed from the first windows.
Claim 3
Dependent Claim
37 words
A method according to claim 2, wherein said
first selective growth mask is made up of a plurality
of individual stripes spaced apart from each other,
defining the first windows therebetween, and extending
parallel to each other.
Claim 4
Dependent Claim
35 words
A method according to claim 3, wherein a ratio
of a width of each of the stripes to a width of each of
the first windows is more than 1 and not more than 20.
Claim 5
Dependent Claim
35 words
A method according to claim 4, wherein a ratio
of a width of each of the stripes to a width of each of
the first windows is more than 1 and not more than 10.
Claim 6
Dependent Claim
27 words
A method according to claim 3, wherein a width
of each of the first windows is not more than 8 µm and
not less than 0.1 µm.
Claim 7
Dependent Claim
27 words
A method according to claim 6, wherein a width
of each of the first windows is not more than 5 µm and
not less than 0.1 µm.
Claim 8
Dependent Claim
19 words
A methods according to claim 3, wherein each of
the stripes has a thickness of 0.01 to 5 µm.
Claim 9
Dependent Claim
39 words
A method according to claim 3, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 10
Dependent Claim
15 words
A method according to claim 9, wherein the
dissimilar substrate has an off-angled major surface.
Claim 11
Dependent Claim
16 words
A method according to claim 10, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 12
Dependent Claim
41 words
A method according to claim 3, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 13
Dependent Claim
15 words
A method according to claim 12, wherein the
dissimilar substrate has an off-angled major surface.
Claim 14
Dependent Claim
16 words
A method according to claim 13, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 15
Dependent Claim
37 words
A method according to claim 3, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 16
Dependent Claim
30 words
A method according to claim 1, wherein the
step (b) further comprises doping the first nitride
semiconductor portion with an n-type impurity during
growth of the first nitride semiconductor portion.
Claim 17
Dependent Claim
27 words
A method according to claim 16, wherein the
n-type impurity is added such that a doping
concentration decreases with an increase in distance
from the dissimilar substrate.
Claim 18
Independent Claim
34 words
A method according to any one of claims 1 to
17, wherein the gaseous nitrogen source and the gaseous
Group 3 element source are supplied at a molar ratio of
not more than 2,000.
Claim 19
Dependent Claim
29 words
A method according to claim 18, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 20
Dependent Claim
29 words
A method according to claim 18, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 21
Dependent Claim
29 words
A method according to claim 18, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than 10.
Claim 22
Dependent Claim
29 words
A method according to claim 21, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 23
Dependent Claim
26 words
A method according to claim 18, wherein growth
of the first nitride semiconductor portion in the step
(b) is performed by a metalorganic vapor-phase
epitaxial method.
Claim 24
Dependent Claim
24 words
A method according to claim 23, wherein growth
of the nitride semiconductor portion is performed under
a reduced pressure of 50 to 400 Torr.
Claim 25
Dependent Claim
59 words
A method according to claim 1, wherein growth
of the first nitride semiconductor portion in the step
(b) is performed by a metalorganic vapor-phase
epitaxial method, and the method further comprises the
step (c) of growing a second nitride semiconductor
portion on the first nitride semiconductor portion
grown in the step (b) by a halide vapor-phase epitaxial
growth method.
Claim 26
Dependent Claim
43 words
A method according to claim 25, wherein a
total area of upper surfaces of portions, of the
underlayer, which are covered with said first selective
growth mask is larger than that of portions, of the
underlayer, which are exposed from the first windows.
Claim 27
Dependent Claim
37 words
A method according to claim 25, wherein said
first selective growth mask is made up of a plurality
of individual stripes spaced apart from each other,
defining the first windows therebetween, and extending
parallel to each other.
Claim 28
Dependent Claim
35 words
A method according to claim 27, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is more than 1 and not more
than 20.
Claim 29
Dependent Claim
35 words
A method according to claim 28, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is more than 1 and not more
than 10.
Claim 30
Dependent Claim
27 words
A method according to claim 28, wherein a
width of each of the first windows is not more than
8 µm and not less than 0.1 µm.
Claim 31
Dependent Claim
27 words
A method according to claim 28, wherein a
width of each of the first windows is not more than
5 µm and not less than 0.1 µm.
Claim 32
Dependent Claim
19 words
A method according to claim 27, wherein each
of the stripes has a thickness of 0.01 to 5 µm.
Claim 33
Dependent Claim
39 words
A method according to claim 27, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 34
Dependent Claim
15 words
A method according to claim 33, wherein the
dissimilar substrate has an off-angled major surface.
Claim 35
Dependent Claim
16 words
A method according to claim 34, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 36
Dependent Claim
41 words
A method according to claim 35, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 37
Dependent Claim
15 words
A method according to claim 36, wherein the
dissimilar substrate has an off-angled major surface.
Claim 38
Dependent Claim
16 words
A method according to claim 37, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 39
Dependent Claim
37 words
A method according to claim 35, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 40
Dependent Claim
32 words
A method according to claim 25, wherein the
step (b) and/or the step (c) further comprises doping
the nitride semiconductor portion with an n-type
impurity during growth of the nitride semiconductor
portion.
Claim 41
Dependent Claim
27 words
A method according to claim 40, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 42
Independent Claim
34 words
A method according to any one of claims 25 to
41, wherein the gaseous nitrogen source and the gaseous
Group 3 element source are supplied at a molar ratio of
not more than 2,000.
Claim 43
Dependent Claim
29 words
A method according to claim 42, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 44
Dependent Claim
29 words
A method according to claim 42, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 45
Dependent Claim
29 words
A method according to claim 42, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 46
Dependent Claim
29 words
A method according to claim 42, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 47
Dependent Claim
24 words
A method according to claim 42, wherein growth
of the nitride semiconductor portion is performed under
a reduced pressure of 50 to 400 Torr.
Claim 48
Dependent Claim
119 words
A nitride semiconductor portion growth method
according to claim 1, further comprising: the step (c) of forming a second selective growth
mask on the first nitride semiconductor portion grown
in the step (b), said second selective growth mask
having a plurality of second windows selectively
exposing upper surfaces of the first nitride
semiconductor portions; and the step (d) of growing second nitride
semiconductor portions from the upper surfaces, of the
first nitride semiconductor portions, which are exposed
from the second windows, by using a gaseous Group 3
element source and a gaseous nitrogen source, until the
second nitride semiconductor portions grown in the
adjacent windows combine with each other on an upper
surface of said second selective growth mask.
Claim 49
Dependent Claim
86 words
A method according to claim 48, wherein a
total area of upper surfaces of portions, of the
underlayer, which are covered with said first selective
growth mask is larger than that of portions, of the
underlayer, which are exposed from the first windows,
and a total area of upper surfaces of portions, of the
first nitride semiconductor portions, which are covered
with said second selective growth mask is larger than
that of portions, of the first nitride semiconductor
portions, which are exposed from the second windows.
Claim 50
Dependent Claim
38 words
A method according to claim 49, wherein said
first and selective growth mask are made up of a
plurality of individual stripes spaced apart from each
other, defining the first windows therebetween, and
extending parallel to each other.
Claim 51
Dependent Claim
34 words
A method according to claim 50, wherein a
ratio of a width of each of the stripes to a width of
each of the windows is more than 1 and not more than 20.
Claim 52
Dependent Claim
34 words
A method according to claim 51, wherein a
ratio of a width of each of the stripes to a width of
each of the windows is more than 1 and not more than 10.
Claim 53
Dependent Claim
26 words
A method according to claim 51, wherein a
width of each of the windows is not more than 8 µm and
not less than 0.1 µm.
Claim 54
Dependent Claim
26 words
A method according to claim 53, wherein a
width of each of the windows is not more than 5 µm and
not less than 0.1 µm.
Claim 55
Dependent Claim
19 words
A method according to claim 50, wherein each
of the stripes has a thickness of 0.01 to 5 µm.
Claim 56
Dependent Claim
39 words
A method according to claim 50, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 57
Dependent Claim
15 words
A method according to claim 56, wherein the
dissimilar substrate has an off-angled major surface.
Claim 58
Dependent Claim
16 words
A method according to claim 57, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 59
Dependent Claim
41 words
A method according to claim 50, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 60
Dependent Claim
15 words
A method according to claim 59, wherein the
dissimilar substrate has an off-angled major surface.
Claim 61
Dependent Claim
16 words
A method according to claim 60, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 62
Dependent Claim
37 words
A method according to claim 50, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 63
Dependent Claim
33 words
A method according to claim 48, wherein the
step (b) and/or the step (d) further comprises doping
the nitride semiconductor portion with an n-type
impurity during growth of the first nitride semiconductor
portion.
Claim 64
Dependent Claim
27 words
A method according to claim 63, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 65
Independent Claim
42 words
A method according to any one of claims 48 to
64, wherein the gaseous nitrogen source and the gaseous
Group 3 element source are supplied at a molar ratio of
not more than 2,000 in the step (b) and/or the step (d).
Claim 66
Dependent Claim
29 words
A method according to claim 65, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 67
Dependent Claim
29 words
A method according to claim 65, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 68
Dependent Claim
29 words
A method according to claim 65, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 69
Dependent Claim
29 words
A method according to claim 65, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 70
Dependent Claim
30 words
A method according to claim 65, wherein growth
of the nitride semiconductor portion in the step (b)
and/or the step (d) is performed by a metal organic
vapor-phase epitaxial method.
Claim 71
Dependent Claim
32 words
A method according to claim 70, wherein growth
of the nitride semiconductor portion in the step (b)
and/or the step (d) is performed under a reduced
pressure of 50 to 400 Torr.
Claim 72
Dependent Claim
156 words
A nitride semiconductor growth method
comprising the steps of: (a) forming a first selective growth mask on a
support member including a dissimilar substrate made of
a material different from a nitride semiconductor and
having a major surface, said first selective growth
mask having a plurality of first windows partly
exposing an upper surface of the support member, such
that a total area of upper surfaces of portions, of the
support member, which are covered with said first
selective growth mask is larger than that of portions,
of the support member, which are exposed from the first
windows; and (b) growing first nitride semiconductor portions
from the upper surface portions, of the support member,
which are exposed from the windows, by using a gaseous
Group 3 element source and a gaseous nitrogen source,
until the nitride semiconductor portions grown in the
adjacent windows combine with each other on an upper
surface of said selective growth mask.
Claim 73
Dependent Claim
37 words
A method according to claim 72, wherein said
first selective growth mask is made up of a plurality
of individual stripes spaced apart from each other,
defining the first windows therebetween, and extending
parallel to each other.
Claim 74
Dependent Claim
31 words
A method according to claim 73, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is not more than 20.
Claim 75
Dependent Claim
31 words
A method according to claim 73, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is not more than 10.
Claim 76
Dependent Claim
27 words
A method according to claim 74, wherein a
width of each of the first windows is not more than
8 µm and not less than 0.1 µm.
Claim 77
Dependent Claim
27 words
A method according to claim 74, wherein a
width of each of the first windows is not more than
5 µm and not less than 0.1 µm.
Claim 78
Dependent Claim
19 words
A method according to claim 73, wherein each
of the stripes has a thickness of 0.01 to 5 µm.
Claim 79
Dependent Claim
39 words
A method according to claim 73, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 80
Dependent Claim
15 words
A method according to claim 79, wherein the
dissimilar substrate has an off-angled major surface.
Claim 81
Dependent Claim
16 words
A method according to claim 80, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 82
Dependent Claim
41 words
A method according to claim 73, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 83
Dependent Claim
15 words
A method according to claim 82, wherein the
dissimilar substrate has an off-angled major surface.
Claim 84
Dependent Claim
16 words
A method according to claim 83, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 85
Dependent Claim
37 words
A method according to claim 73, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 86
Dependent Claim
30 words
A method according to claim 72, wherein the
step (b) further comprises doping the first nitride
semiconductor portion with an n-type impurity during
growth of the first nitride semiconductor portion.
Claim 87
Dependent Claim
27 words
A method according to claim 86, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 88
Independent Claim
34 words
A method according to any one of claims 72 to
87, wherein the gaseous nitrogen source and the gaseous
Group 3 element source are supplied at a molar ratio of
not more than 2,000.
Claim 89
Dependent Claim
29 words
A method according to claim 88, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 90
Dependent Claim
29 words
A method according to claim 88, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 91
Dependent Claim
29 words
A method according to claim 88, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 92
Dependent Claim
29 words
A method according to claim 88, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 93
Dependent Claim
27 words
A method according to claim 88, wherein growth
of the first nitride semiconductor portion in the step
(b) is performed by a metal organic vapor-phase
epitaxial method.
Claim 94
Dependent Claim
24 words
A method according to claim 93, wherein growth
of the nitride semiconductor portion is performed under
a reduced pressure of 50 to 400 Torr.
Claim 95
Dependent Claim
60 words
A method according to claim 72, wherein growth
of the first nitride semiconductor portion in the step
(b) is performed by a metal organic vapor-phase
epitaxial method, and the method further comprises the
step (c) of growing a second nitride semiconductor
portion on the first nitride semiconductor portion
grown in the step (b) by a halide vapor-phase epitaxial
growth method.
Claim 96
Dependent Claim
37 words
A method according to claim 95, wherein said
first selective growth mask is made up of a plurality
of individual stripes spaced apart from each other,
defining the first windows therebetween, and extending
parallel to each other.
Claim 97
Dependent Claim
31 words
A method according to claim 96, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is not more than 20.
Claim 98
Dependent Claim
31 words
A method according to claim 96, wherein a
ratio of a width of each of the stripes to a width of
each of the first windows is not more than 10.
Claim 99
Dependent Claim
27 words
A method according to claim 96, wherein a
width of each of the first windows is not more than
8 µm and not less than 0.1 µm.
Claim 100
Dependent Claim
27 words
A method according to claim 96, wherein a
width of each of the first windows is not more than
5 µm and not less than 0.1 µm.
Claim 101
Dependent Claim
19 words
A method according to claim 96, wherein each
of the stripes has a thickness of 0.01 to 5 µm.
Claim 102
Dependent Claim
39 words
A method according to claim 96, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 103
Dependent Claim
15 words
A method according to claim 102, wherein the
dissimilar substrate has an off-angled major surface.
Claim 104
Dependent Claim
16 words
A method according to claim 103, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 105
Dependent Claim
41 words
A method according to claim 96, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 106
Dependent Claim
15 words
A method according to claim 105, wherein the
dissimilar substrate has an off-angled major surface.
Claim 107
Dependent Claim
16 words
A method according to claim 106, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 108
Dependent Claim
37 words
A method according to claim 96, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 109
Dependent Claim
33 words
A method according to claim 95, wherein the
step (b) and/or the step (c) further comprises doping
the nitride semiconductor portion with an n-type
impurity during growth of the first nitride semiconductor
portion.
Claim 110
Dependent Claim
27 words
A method according to claim 109, wherein the
n-type impurity is added such that a doping
concentration decreases with an increase in distance
from the dissimilar substrate.
Claim 111
Independent Claim
34 words
A method according to any one of claims 95 to
110, wherein the gaseous nitrogen source and the
gaseous Group 3 element source are supplied at a molar
ratio of not more than 2,000.
Claim 112
Dependent Claim
29 words
A method according to claim 111, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 113
Dependent Claim
29 words
A method according to claim 111, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 114
Dependent Claim
29 words
A method according to claim 111, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 115
Dependent Claim
29 words
A method according to claim 111, wherein the
gaseous nitrogen source and the gaseous Croup 3 element
source are supplied at a molar ratio of not less than
30.
Claim 116
Dependent Claim
24 words
A method according to claim 111, wherein
growth of the nitride semiconductor portion is
performed under a reduced pressure of 50 to 400 Torr.
Claim 117
Dependent Claim
118 words
A nitride semiconductor growth method
according to claim 72, further comprising: the step (c) of forming a second selective growth
mask on the first nitride semiconductor portion grown
in the step (b), said second selective growth mask
having a plurality of second windows selectively
exposing upper surfaces of the first nitride
semiconductor portions; and the step (d) of growing second nitride
semiconductor portions from the upper surfaces, of the
first nitride semiconductor portion, which are exposed
from the second windows, by using a gaseous Group 3
element source and a gaseous nitrogen source, until the
second nitride semiconductor portions grown in the
adjacent windows combine with each other on an upper
surface of said second selective growth mask.
Claim 118
Dependent Claim
49 words
A method according to claim 117, wherein a
total area of upper surfaces of portions, of the first
nitride semiconductor portions, which are covered with
said second selective growth mask is larger than that
of portions, of the first nitride semiconductor
portions, which are exposed from the second windows.
Claim 119
Dependent Claim
38 words
A method according to claim 118, wherein said
first and selective growth mask are made up of a
plurality of individual stripes spaced apart from each
other, defining the first windows therebetween, and
extending parallel to each other.
Claim 120
Dependent Claim
30 words
A method according to claim 119, wherein a
ratio of a width of each of the stripes to a width of
each of the windows is not more than 20.
Claim 121
Dependent Claim
30 words
A method according to claim 119, wherein a
ratio of a width of each of the stripes to a width of
each of the windows is not more than 10.
Claim 122
Dependent Claim
26 words
A method according to claim 120, wherein a
width of each of the windows is not more than 8 µm and
not less than 0.1 µm.
Claim 123
Dependent Claim
26 words
A method according to claim 120, wherein a
width of each of the windows is not more than 5 µm and
not less than 0.1 µm.
Claim 124
Dependent Claim
19 words
A method according to claim 119, wherein each
of the stripes has a thickness of 0.01 to 5 µm.
Claim 125
Dependent Claim
39 words
A method according to claim 119, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective stripes extend in a direction perpendicular
to a (11 2 0) plane of sapphire.
Claim 126
Dependent Claim
15 words
A method according to claim 125, wherein the
dissimilar substrate has an off-angled major surface.
Claim 127
Dependent Claim
16 words
A method according to claim 126, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 128
Dependent Claim
41 words
A method according to claim 119, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective stripes extend in a direction perpendicular
to the (1 1 20) plane of sapphire.
Claim 129
Dependent Claim
15 words
A method according to claim 128, wherein the
dissimilar substrate has an off-angled major surface.
Claim 130
Dependent Claim
16 words
A method according to claim 128, wherein the
dissimilar substrate has a major surface off-angled
stepwise.
Claim 131
Dependent Claim
37 words
A method according to claim 119, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 132
Dependent Claim
33 words
A method according to claim 117, wherein the
step (b) and/or the step (d) further comprises doping
the nitride semiconductor portion with an n-type
impurity during growth of the first nitride semiconductor
portion.
Claim 133
Dependent Claim
27 words
A method according to claim 132, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 134
Independent Claim
42 words
A method according to any one of claims 117 to
133, wherein the gaseous nitrogen source and the
gaseous Group 3 element source are supplied at a molar
ratio of not more than 2,000 in the step (b) and/or the
step (d).
Claim 135
Dependent Claim
29 words
A method according to claim 134, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 136
Dependent Claim
29 words
A method according to claim 134, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 137
Dependent Claim
28 words
A method according to claim 134, wherein the
gaseous nitrogen source and,the gaseous Croup 3 element
source are supplied at a molar ratio of not less than
10.
Claim 138
Dependent Claim
29 words
A method according to claim 134, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 139
Dependent Claim
30 words
A method according to claim 134, wherein
growth of the nitride semiconductor portion in the step
(b) and/or the step (d) is performed by a metal organic
vapor-phase epitaxial method.
Claim 140
Dependent Claim
32 words
A method according to claim 139, wherein
growth of the nitride semiconductor portion in the step
(b) and/or the step (d) is performed under a reduced
pressure of 50 to 400 Torr.
Claim 141
Dependent Claim
121 words
A nitride semiconductor growth method
comprising the steps of: (a) forming a nitride semiconductor layer on a
support member including a dissimilar substrate made of
a material different from a nitride semiconductor and
having a major surface; (b) forming a plurality of recess portions having
bottom surfaces substantially parallel to an upper
surface of the support member in said nitride
semiconductor layer; (c) selectively forming a first growth control
mask on a top surface of the nitride semiconductor
layer to selectively expose the nitride semiconductor
layer from side surfaces of the recess portions; and (d) growing a nitride semiconductor from an
exposed surface of the nitride semiconductor layer by
using a gaseous Group 3 element source and a gaseous
nitrogen source.
Claim 142
Dependent Claim
26 words
A method according to claim 141, wherein the
recess portions are formed by a plurality of individual
grooves spaced apart from each other and extending
parallel.
Claim 143
Dependent Claim
41 words
A method according to claim 142, wherein the
plurality of individual grooves have a plurality of
individual walls formed therebetween, and said first
growth control mask is made up of individual stripes
formed on top surfaces of the respective individual
walls.
Claim 144
Dependent Claim
27 words
A method according to claim 143, wherein a
total surface area of said first growth control mask is
larger than that of bottom surfaces of the grooves.
Claim 145
Dependent Claim
35 words
A method according to claim 144, wherein a
ratio of a width of each of the individual stripes to a
width of each of the grooves is more than 1 and not
more than 20.
Claim 146
Dependent Claim
35 words
A method according to claim 145, wherein a
ratio of a width of each of the individual stripes to a
width of each of the grooves is more than 1 and not
more than 10.
Claim 147
Dependent Claim
20 words
A method according to claim 146, wherein each
of the grooves has a depth of 500 angstroms to 5 µm.
Claim 148
Dependent Claim
40 words
A method according to claim 143, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective individual stripes extend in a direction
perpendicular to a (11 2 0) plane of sapphire.
Claim 149
Dependent Claim
42 words
A method according to claim 143, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective individual stripes extend in a direction
perpendicular to the (1 1 20) plane of sapphire.
Claim 150
Dependent Claim
37 words
A method according to claim 143, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 151
Dependent Claim
29 words
A method according to claim 141, wherein the
step (d) further comprises doping the nitride
semiconductor portion with an n-type impurity during
growth of the first nitride semiconductor portion.
Claim 152
Dependent Claim
27 words
A method according to claim 151, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 153
Independent Claim
34 words
A method according to any one of claims 141 to
152, wherein the gaseous nitrogen source and the
gaseous Group 3 element source are supplied at a molar
ratio of not more than 2,000.
Claim 154
Dependent Claim
29 words
A method according to claim 153, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 155
Dependent Claim
29 words
A method according to claim 153, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 156
Dependent Claim
29 words
A method according to claim 153, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 157
Dependent Claim
29 words
A method according to claim 156, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 158
Dependent Claim
26 words
A method according to claim 153, wherein
growth of the nitride semiconductor portion in the step
(d) is performed by a metal organic vapor-phase
epitaxial method.
Claim 159
Dependent Claim
24 words
A method according to claim 158, wherein
growth of the nitride semiconductor portion is
performed under a reduced pressure of 50 to 400 Torr.
Claim 160
Dependent Claim
40 words
A method according to claim 141, wherein the
step (c) further comprises forming a second growth
control mask on the bottom surfaces of the recess
portions to selectively expose the nitride semiconductor
layer from side surfaces of the recess portions.
Claim 161
Dependent Claim
26 words
A method according to claim 160, wherein the
recess portions are formed by a plurality of individual
grooves spaced apart from each other and extending
parallel.
Claim 162
Dependent Claim
41 words
A method according to claim 161, wherein the
plurality of individual grooves have a plurality of
individual walls formed therebetween, and said first
growth control mask is made up of individual stripes
formed on top surfaces of the respective individual
walls.
Claim 163
Dependent Claim
34 words
A method according to claim 162, wherein a
portion of the nitride semiconductor layer that is
exposed from a side surface of the recess portion has a
thickness of not less than 100 angstroms.
Claim 164
Dependent Claim
33 words
A method according to claim 162, wherein a
portion of the nitride semiconductor layer that is
exposed from a side surface of the recess portion has a
thickness of 1 to 10 µm.
Claim 165
Dependent Claim
40 words
A method according to claim 162, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (0001) plane, and the
respective individual stripes extend in a direction
perpendicular to a (11 2 0) plane of sapphire.
Claim 166
Dependent Claim
42 words
A method according to claim 162, wherein the
dissimilar substrate is a sapphire substrate having a
major surface forming a (11 2 0) plane, and the
respective individual stripes extend in a direction
perpendicular to the (1 1 20) plane of sapphire.
Claim 167
Dependent Claim
37 words
A method according to claim 162, wherein the
dissimilar substrate is a spinnel substrate having a
major surface forming a (111) plane, and the respective
stripes extend in a direction perpendicular to the
(110) plane of spinnel.
Claim 168
Dependent Claim
29 words
A method according to claim 160, wherein the
step (d) further comprises doping the nitride
semiconductor portion with an n-type impurity during
growth of the first nitride semiconductor portion.
Claim 169
Dependent Claim
27 words
A method according to claim 168, wherein the
n-type impurity is added such that a doping concentration
decreases with an increase in distance from the
dissimilar substrate.
Claim 170
Independent Claim
34 words
A method according to any one of claims 160 to
169, wherein the gaseous nitrogen source and the
gaseous Group 3 element source are supplied at a molar
ratio of not more than 2,000.
Claim 171
Dependent Claim
29 words
A method according to claim 170, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,800.
Claim 172
Dependent Claim
29 words
A method according to claim 170, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not more than
1,500.
Claim 173
Dependent Claim
29 words
A method according to claim 170, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
10.
Claim 174
Dependent Claim
29 words
A method according to claim 170, wherein the
gaseous nitrogen source and the gaseous Group 3 element
source are supplied at a molar ratio of not less than
30.
Claim 175
Dependent Claim
26 words
A method according to claim 170, wherein
growth of the nitride semiconductor portion in the step
(d) is performed by a metal organic vapor-phase
epitaxial method.
Claim 176
Dependent Claim
24 words
A method according to claim 173, wherein
growth of the nitride semiconductor portion is
performed under a reduced pressure of 50 to 400 Torr.
Claim 177
Dependent Claim
48 words
A nitride semiconductor substrate comprising a
nitride semiconductor crystal and having first and
second major surfaces, wherein a region near the first
major surface has a relatively small number of crystal
defects, and a region near the second major surface has
a relatively large number of crystal defects.
Claim 178
Dependent Claim
38 words
A substrate according to claim 177, wherein
first regions, each having a relatively small number of
crystal defects, and second regions, each having a
relatively large number of crystal defects, are
unevenly distributed in the first major surface.
Claim 179
Dependent Claim
18 words
A substrate according to claim 177, wherein
said substrate has a thickness of not less than 70 µm.
Claim 180
Dependent Claim
43 words
A nitride semiconductor substrate comprising a
nitride semiconductor crystal and having first and
second major surfaces, characterized by the number of
crystal defects in a surface region in the first major
surface being not more than 1 × 10 5 /cm 2 .
Claim 181
Dependent Claim
17 words
A nitride semiconductor substrate according to
claim 180, wherein said substrate is doped with an
n-type impurity.
Claim 182
Dependent Claim
19 words
A nitride semiconductor substrate according to
claim 181, wherein the n-type impurity has a
concentration gradient in said substrate.
Claim 183
Dependent Claim
18 words
A substrate according to claim 180, wherein
said substrate is grown by a halide vapor-phase
epitaxial growth method.
Claim 184
Dependent Claim
25 words
A nitride semiconductor device comprising a
nitride semiconductor device structure supported on
said nitride semiconductor substrate defined in any one
of claims 177 to 183.
Claim 185
Dependent Claim
26 words
A device according to claim 184, wherein said
nitride semiconductor substrate is supported on a
dissimilar substrate made of a material different from
a nitride semiconductor.
Claim 186
Dependent Claim
84 words
A nitride semiconductor growth method
characterized by comprising the steps of forming a
nitride semiconductor on a support member including a
dissimilar substrate, using said nitride semiconductor
as a seed crystal to grow a new nitride semiconductor
in substantially only a lateral direction while
suppressing growth of the nitride semiconductor in a
vertical direction, and then growing the nitride
semiconductor in both the vertical and lateral
directions, thereby obtaining an integral nitride
semiconductor crystal on a substantially entire upper
surface of the support member.
References Cited (Backward Citations)
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