Patent EP0924752A2 successfully refreshed from Google Patents.
EP0924752A2
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Method of fabrication of high dielectric constant capacitors
Assignee: Texas Instruments Inc
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Filing: 1998-12-16
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Granted: —
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Expires: 2018-12-16
Abstract
Abstract The capacitor (12) comprises a HDC dielectric (40) and upper (44) and lower (32-36) electrodes. The lower electrode comprises a polysilicon base (32), a diffusion barrier (34) on the sidewalls of the polysilicon base (32) and an oxygen stable material (36) on the sidewalls adjacent the diffusion barrier (34) and separated from the polysilicon base (32) sidewalls by the diffusion barrier (34). The oxygen stable material (36) is formed on the sidewalls by a deposition and either etchback or CMP process rather than by a patterned etch. The HDC dielectric (40) is then formed adjacent the oxygen stable material (36).
Inventors
- 👤 Darius L. Crenshaw
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:51
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/315; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
161 words
A method for forming a high dielectric constant (HDC)
capacitor comprising: forming a temporary dielectric layer over a structure for
which the capacitor is desired; forming a pattern over the temporary dielectric layer, said
pattern exposing portions of the temporary dielectric layer over
a storage node region where a bottom electrode of the capacitor
is desired; etching said temporary dielectric layer using said pattern
to remove said temporary dielectric layer in said storage node
region; removing said pattern; forming a conductive base in said storage node region; removing said temporary dielectric layer; forming a diffusion barrier on the sidewalls of said
conductive base; forming an oxygen stable layer on the sidewalls of said
diffusion barrier, said diffusion barrier being arranged to
prevent said oxygen stable layer from reacting with said
conductive base and to prevent said conductive base from
oxidizing; forming a HDC dielectric over the conductive base and
oxygen stable layer; and forming an upper electrode over the HDC dielectric.
Claim 2
Dependent Claim
37 words
The method of Claim 1, wherein the step of forming a
diffusion barrier comprises the steps of: depositing a diffusion barrier material; and etching said diffusion barrier material to remove said
diffusion barrier material from horizonal surfaces.
Claim 3
Dependent Claim
45 words
The method of Claim 1 or Claim 2, wherein the steps of
forming an oxygen stable layer comprise the steps of: depositing an oxygen stable material over the diffusion
barrier material; etching said oxygen stable material to remove said oxygen
stable material from horizonal surfaces.
Claim 4
Independent Claim
29 words
The method of any preceding claim, further comprising the
step of performing a rapid thermal nitridation of the conductive
base prior to said step of forming said HDC dielectric.
Claim 5
Independent Claim
41 words
The method of any of Claims 1 to 4, wherein said step of
depositing said diffusion barrier comprises forming said
diffusion barrier from a material selected from a group
consisting of titanium-nitride, ternary or greater amorphous
nitrides, and exotic compound nitrides.
Claim 6
Independent Claim
42 words
The method of any of Claims 1 to 5, wherein the step of
forming said oxygen stable layer comprises forming said oxygen
stable layer from a material selected from the group consisting
of: noble metals, alloys of noble metals, and conductive oxides.
Claim 7
Dependent Claim
37 words
The method of claim 1, wherein said step of forming said HDC
dielectric comprises forming said HDC dielectrid from a material
selected from the group consisting of: BST, other perovskites,
ferroelectrics, pyroelectrics, or high dielectric constant
oxides.
Claim 8
Dependent Claim
94 words
A capacitor comprising: a lower electrode comprising: a diffusion barrier on the sidewalls of a
conductive base; and an oxygen stable layer formed on the sidewalls of said
diffusion barrier, the diffusion barrier being arranged to
prevent a reaction between the oxygen stable layer and the
conductive base and to prevent the conductive base from
oxidizing on its sidewalls; a HDC dielectric located over the conductive base and
separated from the conductive base on the sidewalls by said
diffusion barrier and the oxygen stable layer; and
an upper electrode located over the HDC dielectric.
References Cited (Backward Citations)
No citation records indexed.
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