Patent EP0915522A2 successfully refreshed from Google Patents.
EP0915522A2
Expired / Lapsed
EP
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Semiconductor device comprising a capacitor and method of manufacturing the same
Assignee: NEC Corp
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Filing: 1998-10-28
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Granted: —
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Expires: 2018-10-28
Abstract
Abstract A semiconductor device has a device isolation oxide film, an interlayer insulating film, hydrogen barrier films, a lower electrode, a capacitor insulating film, an upper electrode, an interlayer insulating film and a wiring layer, formed on a silicon substrate. A gate electrode is formed on a gate oxide film between impurity diffusion regions in the silicon substrate. Further, a capacitor portion, comprising the lower electrode, the capacitor insulating film (ferroelectric or high dielectric substance) and the upper electrode, is completely covered with the hydrogen barrier films. The hydrogen barrier films prevent deterioration of the ferroelectric substance and the high dielectric constant material due to reducing conditions in a hydrogen atmosphere. Other device characteristics, however, are not adversely affected because only the capacitor portion is completely covered with the hydrogen barrier films.
Inventors
- 👤 Kazushi c/o NEC Corporation Amanuma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 11:36
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
55 words
A semiconductor device comprising: a capacitor portion having a capacitor insulating film, said capacitor
insulating film comprising a material selected from the group consisting of a
ferroelectric substance material or a high dielectric constant material; a hydrogen barrier film, said hydrogen barrier film covering said
capacitor portion; and a portion having no hydrogen barrier film.
Claim 2
Dependent Claim
49 words
A semiconductor device as in claim 1, further comprising a transistor portion; a surface on said capacitor portion; and a contact portion located at said surface for electrically contacting said
transistor portion to said capacitor portion, whereby said hydrogen barrier film
covers said surface except for said contact portion.
Claim 3
Dependent Claim
135 words
A semiconductor device comprising: a substrate, said substrate forming a substrate plane; a transistor portion having a gate oxide film on said substrate, a gate
electrode on said gate oxide film, and an impurity diffusion region; a capacitor portion having a capacitor insulating film, said capacitor
insulating film comprising a material selected from the group consisting of a
ferroelectric substance material or a high dielectric constant material, said capacitor
portion having a surface and said surface having a contact portion for electrically
contacting said impurity diffusion region to said capacitor portion, said capacitor
portion and said transistor portion not overlapping each other on the substrate
plane; and a hydrogen barrier film, said hydrogen barrier film located on said
surface except for said contact portion; whereby no hydrogen barrier film is located over said transistor
portion.
Claim 4
Dependent Claim
109 words
A semiconductor device as in claim 3, wherein: said capacitor portion has a top and a lower electrode, and said lower
electrode has an upper surface, and said capacitor insulating film is located on said
upper surface; said semiconductor device comprises a first hydrogen barrier film,
said first hydrogen barrier film being nonconductive and being located under said
lower electrode and not at said contact portion; said semiconductor device comprises a second hydrogen barrier film,
said second hydrogen barrier film located on said top of said capacitor portion and
said second hydrogen barrier film selected from the group consisting of conductive
hydrogen barrier films and nonconductive hydrogen barrier films.
Claim 5
Dependent Claim
43 words
A semiconductor device as in claim 4, wherein said nonconductive
hydrogen barrier film comprises at least one selected from the group consisting of
Si 3 N 4 , SiON and a combination of Si 3 N 4 , SiON and SiO 2 .
Claim 6
Dependent Claim
93 words
A semiconductor device as in claim 3, wherein: said capacitor portion has a conductive top and a lower electrode, and
said lower electrode has an upper surface and a side surface, and said capacitor
insulating film is located on said upper surface and said side surface; said capacitor insulating film has a lower surface; and said semiconductor device comprises a nonconductive hydrogen
barrier film, said nonconductive hydrogen barrier film covering said conductive top
of said capacitor portion, said side surface of said lower electrode and said lower
surface of said capacitor insulating film.
Claim 7
Dependent Claim
27 words
A semiconductor device as in claim 6, wherein said semiconductor
device comprises a conductive hydrogen barrier film and said conductive hydrogen
barrier film covers said contact portion.
Claim 8
Dependent Claim
32 words
A semiconductor device as in claim 7, wherein said conductive
hydrogen barrier film comprises at least one selected from the group consisting of
nitrides of Ti, Zr, Nb, Ta, Hf and W.
Claim 9
Dependent Claim
43 words
A semiconductor device as in claim 6, wherein said nonconductive
hydrogen barrier film comprises at least one selected from the group consisting of
Si 3 N 4 , SiON and a combination of Si 3 N 4 , SiON and SiO 2 .
Claim 10
Dependent Claim
12 words
A semiconductor device as in claim 6, further comprising: an upper electrode.
Claim 11
Dependent Claim
135 words
A semiconductor device comprising: a substrate; a transistor portion, said transistor portion having a gate oxide film on
said substrate, a gate electrode on said gate oxide film, and an impurity diffusion
region; a plurality of capacitor portions, each of said capacitor portions having
a capacitor insulating film, said capacitor insulating film comprising a material
selected from the group consisting of a ferroelectric substance material or a high
dielectric constant material, each of said capacitor portions formed on a plug
electrically connected to said impurity diffusion region, and each of said capacitor
portions having a surface with a contact portion, said contact portion being
electrically connected to said transistor portion; and a hydrogen barrier film located on said surface except for said contact
portion; whereby no hydrogen barrier film is located between said capacitor
portions.
Claim 12
Dependent Claim
109 words
A semiconductor device as in claim 11 wherein: said capacitor portion has a top and a lower electrode, and said lower
electrode has an upper surface, and said capacitor insulating film is located on said
upper surface; said semiconductor device comprises a first hydrogen barrier film,
said first hydrogen barrier film being nonconductive and being located under said
lower electrode and not at said contact portion; said semiconductor device comprises a second hydrogen barrier film,
said second hydrogen barrier film located on said top of said capacitor portion and
said second hydrogen barrier film selected from the group consisting of conductive
hydrogen barrier films and nonconductive hydrogen barrier films.
Claim 13
Dependent Claim
43 words
A semiconductor device as in claim 12, wherein said nonconductive
hydrogen barrier film comprises at least one selected from the group consisting of
Si 3 N 4 , SiON and a combination of Si 3 N 4 , SiON and SiO 2 .
Claim 14
Dependent Claim
93 words
A semiconductor device as in claim 11, wherein: said capacitor portion has a conductive top and a lower electrode, and
said lower electrode has an upper surface and a side surface, and said capacitor
insulating film is located on said upper surface and said side surface; said capacitor insulating film has a lower surface; and said semiconductor device comprises a nonconductive hydrogen
barrier film, said nonconductive hydrogen barrier film covering said conductive top
of said capacitor portion, said side surface of said lower electrode and said lower
surface of said capacitor insulating film.
Claim 15
Dependent Claim
27 words
A semiconductor device as in claim 14, wherein said semiconductor
device comprises a conductive hydrogen barrier film and said conductive hydrogen
barrier film covers said contact portion.
Claim 16
Dependent Claim
32 words
A semiconductor device as in claim 15, wherein said conductive
hydrogen barrier film comprises at least one selected from the group consisting of
nitrides of Ti, Zr, Nb, Ta, Hf and W.
Claim 17
Dependent Claim
43 words
A semiconductor device as in claim 14, wherein said nonconductive
hydrogen barrier film comprises at least one selected from the group consisting of
Si 3 N 4 , SiON and a combination of Si 3 N 4 , SiON and SiO 2 .
Claim 18
Dependent Claim
12 words
A semiconductor device as in claim 14, further comprising: an upper electrode.
Claim 19
Dependent Claim
40 words
A semiconductor device comprising: a capacitor portion having a capacitor insulating film, said capacitor
insulating film comprising a metal oxide; a hydrogen barrier film, said hydrogen barrier film covering said
capacitor portion; and a portion having no hydrogen barrier film.
Claim 20
Dependent Claim
33 words
A semiconductor device as in claim 19, wherein said metal oxide is
one selected from the group consisting of SrBi 2 Ta 2 O 9 , Pb(Zr,Ti)O 3 , and (Sr,Ba)TiO 3 .
Claim 21
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising steps
of: forming a capacitor portion having a lower electrode, a capacitor
insulating film, and an upper electrode, said capacitor insulating film comprising a
material selected from the group consisting of a ferroelectric substance material or
a high dielectric constant material; forming a hydrogen barrier film that covers said capacitor portion; and removing a portion of said hydrogen barrier film by etching.
Claim 22
Independent Claim
133 words
A method of manufacturing a semiconductor device comprising steps
of: forming a lower electrode on a first hydrogen barrier film; forming a capacitor insulating film on said lower electrode; forming an upper electrode on said capacitor insulating film; forming a second hydrogen barrier film on said upper electrode; patterning together said first hydrogen barrier film, said lower
electrode, said capacitor insulating film, said upper electrode, and said second
hydrogen barrier film to form a patterned surface including a capacitor portion; forming a third hydrogen barrier film on said patterned surface,
whereby said third hydrogen barrier film is nonconductive; removing said third hydrogen barrier film from said patterned surface,
except not from said capacitor portion; and removing a portion of said third hydrogen barrier film on said upper
electrode to form a contact portion.
Claim 23
Independent Claim
125 words
A method of manufacturing a semiconductor device comprising steps
of: forming a lower electrode on a first hydrogen barrier film; forming a capacitor insulating film on said lower electrode; forming an upper electrode on said capacitor insulating film; patterning together said first hydrogen barrier film, said lower
electrode, said capacitor insulating film and said upper electrode to form a
patterned surface including a capacitor portion; forming a third hydrogen barrier film on said patterned surface and
removing said third hydrogen barrier film except not from said capacitor portion; removing a portion of said third hydrogen barrier film on said upper
electrode to form a contact portion; and forming a second hydrogen barrier film to cover said contact portion,
said second hydrogen barrier film being conductive.
Claim 24
Independent Claim
131 words
A method of manufacturing a semiconductor device comprising steps
of: forming a first, nonconductive hydrogen barrier film on an interlayer
insulating film; forming a plug; forming a second, conductive hydrogen barrier film on said plug; forming a lower electrode on said second, conductive hydrogen
barrier film; patterning said lower electrode and said second, conductive hydrogen
barrier film to form a patterned surface including a capacitor portion; forming a capacitor insulating film on said patterned surface; removing said capacitor insulating film from said patterned surface
except not from said capacitor portion; forming a third, conductive hydrogen barrier film on said patterned
surface including on said capacitor portion; removing said third, conductive hydrogen barrier film and said first,
nonconductive hydrogen barrier film from said interlayer insulating film except not
from said capacitor portion.
Claim 25
Independent Claim
146 words
A method of manufacturing a semiconductor device comprising steps
of: forming a first, nonconductive hydrogen barrier film on an interlayer
insulating film; forming a plug in said first, nonconductive hydrogen barrier film and
in said interlayer insulating film; forming a second, conductive hydrogen barrier film on said plug and
on said first, nonconductive hydrogen barrier film; forming a lower electrode on said second, conductive hydrogen
barrier film; patterning said lower electrode and said second, conductive hydrogen
barrier film to form a patterned surface including a capacitor portion; forming a capacitor insulating film on said patterned surface including
on said capacitor portion; forming a third, conductive hydrogen barrier film on said patterned
surface including on said capacitor portion; removing said third, conductive hydrogen barrier film, said capacitor
insulating film and said first, nonconductive hydrogen barrier film from said
interlayer insulating film except not from said capacitor portion.
Claim 26
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising steps
of: forming a plug in an interlayer insulating film; forming a first, conductive hydrogen barrier film on said plug and on
said interlayer insulating film; forming a lower electrode on said first, conductive hydrogen barrier
film; patterning said lower electrode to form a patterned surface including
a capacitor portion; forming a capacitor insulating film on said patterned surface including
on said capacitor portion; forming a second, conductive hydrogen barrier film on said patterned
surface including on said capacitor portion; removing said second, conductive hydrogen barrier film, said
capacitor insulating film and said first, conductive hydrogen barrier film from said
interlayer insulating film, except not from said capacitor portion.
References Cited (Backward Citations)
No citation records indexed.
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