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EP0909024A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Impedance matching device

Assignee: Sharp Corp
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Filing: 1998-09-09
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Granted: —
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Expires: 2018-09-09
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Abstract

Abstract An impedance matching device includes a variable capacitor constituted by a non-linear dielectric thin film and an upper electrode disposed on a lower electrode formed on a substrate. The non-linear dielectric thin film is formed by a deposition, screen-printing, electroplating, or other technique, and changes its relative dielectric constant according to applied voltage. Therefore, the capacity of the variable capacitor is controlled and the impedance is matched, by simply controlling the applied voltage across the non-linear dielectric thin film. Consequently, the arrangement makes it possible to cut down the impedance matching device in size and cost, compared to an arrangement incorporating a capacitor and a coil for adjustment, effects a much simpler matching operation, and facilitates a manufacturing process.

Inventors

  • 👤 Masumi Nakamichi
  • 👤 Yoshiyuki Masuda

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 14:42
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/38

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 105 words
An impedance matching device (1) mounted on a high frequency circuit substrate, being characterised in that said device comprises: a voltage-controlled variable capacitor (4), for receiving an input signal, including, a non-linear dielectric thin film (5) having a relative dielectric constant in accordance with a strength of an applied electric field, a first electrode (6) formed on one of the sides of the non-linear dielectric thin film (5), and a second electrode (7) formed on the opposite side of the non-linear dielectric thin film (5); and a control voltage application section (31) for applying a control voltage across the first and second electrodes (6, 7).
Claim 2
Dependent Claim 39 words
The impedance matching device (1) as set forth in claim 1, wherein the non-linear dielectric thin film (5) is made of BaTiO 3 , SrTiO 3 , or Ba x Sr 1-x TiO 3 (0 < x < 1).
Claim 3
Dependent Claim 29 words
The impedance matching device (1) as set forth in claim 2, wherein the non-linear dielectric thin film (5) has a uniform thickness in a range of 0.05µm to 10µm.
Claim 4
Dependent Claim 43 words
The impedance matching device (1) as set forth in any one of claims 1 to 3, wherein the non-linear dielectric thin film (5) is formed directly on a high frequency circuit substrate (14) made of a dielectric ceramic substrate or a glass substrate.
Claim 5
Dependent Claim 44 words
The impedance matching device (1) as set forth in claim 4, wherein the non-linear dielectric thin film (5) is formed directly on the high frequency circuit substrate (14) by a deposition technique, a printing technique, or a sol-gel technique using an organic metal salt.
Claim 6
Dependent Claim 26 words
The impedance matching device (1) as set forth in claim 5, wherein the non-linear dielectric thin film (5) is formed (14) by a photo etching technique.
Claim 7
Dependent Claim 20 words
The impedance matching device (1) as set forth in claim 6, wherein the photo etching technique is a lift-off technique.
Claim 8
Dependent Claim 36 words
The impedance matching device (1) as set forth in claim 1, wherein the non-linear dielectric thin film (5) is made of Ba x Sr 1-x TiO 3 (0 < x < 1) by a sol-gel technique.
Claim 9
Dependent Claim 44 words
The impedance matching device (1) as set forth in any one of claims 4 to 6, wherein the non-linear dielectric thin film (5) has an outer circumferential edge covered with an insulating film (17) made of a material having a low relative dielectric constant.
Claim 10
Dependent Claim 27 words
The impedance matching device (1) as set forth in claim 9, wherein the insulating film (17) is made of SiO 2 or Al 2 O 3 .
Claim 11
Dependent Claim 38 words
The impedance matching device (1) as set forth in any one of claims 1 to 3, wherein the non-linear dielectric thin film (5) is formed on a high frequency circuit substrate (14) by a ceramic green sheet process.
Claim 12
Dependent Claim 40 words
The impedance matching device (1) as set forth in any one of claims 1 to 11, wherein the first and second electrodes (6, 7) each are a thick film conductive body formed with a skin thickness thereof taken into consideration.
Claim 13
Dependent Claim 30 words
The impedance matching device (1) as set forth in claim 12, wherein the first and second electrodes (6, 7) each are made of a laminated layer of Pt and Ta.
Claim 14
Dependent Claim 49 words
The impedance matching device (1) as set forth in claim 1, wherein the voltage-controlled variable capacitor (4) compensates, using part of a change in a capacity caused by a change in a relative dielectric constant of the non-linear dielectric thin film (5), for an irregularity in design and manufacture.

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