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EP0875924A2
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Improved tantalum-containing barrier layers for copper
Assignee: Applied Materials Inc
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Filing: 1998-04-29
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Granted: —
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Expires: 2018-04-29
Abstract
Abstract An improved barrier layer of tantalum to prevent diffusion of copper into a dielectric layer is made by alternately sputter depositing a thin amorphous tantalum layer and a tantalum nitride layer. The wholly amorphous tantalum-containing layer prevents formation of a columnar structure in thick tantalum layers which tend to peel, destroying the barrier. The sputter depositions of tantalum and tantalum nitride can be repeated until the desired thickness of the barrier is obtained.
Inventors
- 👤 Peijun Ding
- 👤 Tony Ping-Chen Chiang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 06:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
13 words
A tantalum-containing barrier film comprising alternate
layers of amorphous tantalum and tantalum nitride.
Claim 2
Dependent Claim
14 words
A contact comprising alternating layers of amorphous
tantalum and tantalum nitride coated with copper.
Claim 3
Dependent Claim
22 words
A conductive via comprising a first layer of amorphous
tantalum, a second layer of tantalum nitride and copper to fill
the via.
Claim 4
Independent Claim
42 words
A method of making amorphous barrier layers in an opening to
be filled with copper comprising a) sputter depositing a first amorphous tantalum layer; b) sputter depositing a second amorphous tantalum nitride
layer to line the bottom and sidewalls of the opening.
Claim 5
Dependent Claim
22 words
A method according to claim 4 wherein steps a) and b) are
repeated until the desired thickness of the liner is obtained.
References Cited (Backward Citations)
No citation records indexed.
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