Patent EP0860863A2 successfully refreshed from Google Patents.
EP0860863A2
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EP
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A laminated structure of polysilicon and tungsten silicide and a method of forming the same
Assignee: Tokyo Electron Ltd
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Filing: 1998-02-25
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Granted: —
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Expires: 2018-02-25
Abstract
Abstract A method of forming a gate electrode of a multi-layer structure comprises a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer (10) doped with P-type impurities, on a surface of a gate film (6) target, a step of maintaining the processing target in the film formation device to prevent formation of no oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer (12) doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
Inventors
- 👤 Masato Koizumi
- 👤 Kazuya Okubo
- 👤 Tsuyoshi Takahashi
- 👤 Tsuyoshi Hashimoto
- 👤 Kimihiro Matsuse
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 12:13
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
140 words
A method of forming a multi-layer structure,
characterized by comprising: a step of supplying a processing gas for poly-crystal
film formation and impurities of one conductive
type into a film formation device, to form a poly-crystal
silicon layer (10) doped with first impurities
of one conductive type, on a surface of a processing
target (W); a step of maintaining the processing target in the
film formation device to prevent formation of an oxide
film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten
silicide film formation and second impurities of the
same conductive type as the first impurities into the
film formation device, to form a tungsten silicide
layer (12) doped with impurities of the same conductive
type as the first impurities, on the poly-crystal
silicon layer on which no oxide film is formed.
Claim 2
Dependent Claim
23 words
A method of forming a multi-layer structure
according to claim 1, characterized in that the first
impurities are same as the second impurities.
Claim 3
Dependent Claim
60 words
A method of forming a multi-layer structure
according to claim 1, characterized in that the film
formation device is a cluster tool including a first
chamber in which the poly-crystal silicon layer is
formed, and a second chamber in which the tungsten
silicide layer is formed on the poly-crystal silicon
layer of the processing target transported from the
first chamber.
Claim 4
Independent Claim
83 words
A method of forming a multi-layer structure,
characterized by comprising: a step of forming a first poly-crystal silicon
layer (10) doped with impurities of one conductive type,
on a surface of a processing target (W); a step of sequentially forming a second
poly-crystal silicon layer (16) containing no
impurities of one conductive type, on the first poly-crystal
silicon layer; and a step of sequentially forming a tungsten silicide
layer (11) containing no impurities of one conductive
type, on the second poly-crystal silicon layer.
Claim 5
Independent Claim
118 words
A method of forming a multi-layer structure,
characterized by comprising: a step of forming a first poly-crystal silicon
layer (10) doped with first impurities of one conductive
type at a uniform density distribution, on a
surface of a processing target (W); a step of sequentially forming a second poly-crystal
silicon layer (18) on the first poly-crystal
silicon layer, such that the second poly-crystal
silicon layer is doped with impurities of the same
conductive type as the first impurities, at a uniform
distribution and at a density lower than a density of
the first impurities; and a step of sequentially forming a tungsten silicide
layer (11) containing no impurities of one conductive
type, on the second poly-crystal silicon layer.
Claim 6
Dependent Claim
96 words
A method of forming a multi-layer structure
according to claim 5, characterized in that the step of
forming the first poly-crystal silicon layer is carried
out by supplying a processing gas for poly-crystal film
formation and impurities of one conductive type into
a film formation device, and the step of forming the
second poly-crystal silicon layer is carried out,
following the step of forming the first poly-crystal
silicon layer, by reducing a supply amount of the
impurities of the conductive type to be smaller than
that in the step of forming the first poly-crystal
silicon layer.
Claim 7
Dependent Claim
30 words
A method of forming a multi-layer structure
according to claim 5, characterized in that the
thickness of the second poly-crystal silicon layer is
within a range of 50Å to 500Å.
Claim 8
Independent Claim
117 words
A method of forming a multi-layer structure,
characterized by comprising: a step of forming a first poly-crystal silicon
layer (10) doped with first impurities of one conductive
type at a uniform density distribution, on a
surface of a processing target (W); a step of sequentially forming a second poly-crystal
silicon layer (18) on the first poly-crystal
silicon layer, such that the second poly-crystal
silicon layer is doped with impurities of the same
conductive type as the first impurities, at a uniform
distribution and at a density higher than that of the
first impurities; and a step of sequentially forming a tungsten silicide
layer (11) containing no impurities of one conductive
type, on the second poly-crystal silicon layer.
Claim 9
Dependent Claim
76 words
A method of forming a multi-layer structure
according to claim 8, characterized in that the step of
forming the first poly-crystal silicon layer is carried
out by supplying a processing gas for poly-crystal film
formation and impurities of one conductive type into
a film formation device, and the step of forming the
second poly-crystal silicon layer is carried out,
following the step of forming the first poly-crystal
silicon layer, by stopping supply of the processing gas.
Claim 10
Dependent Claim
65 words
A method of forming a multi-layer structure
according to claim 9, characterized in that the
processing target includes a semiconductor substrate
(W) having a source region (2) and a drain region (4)
provided apart from each other, and a gate film (6)
formed between the source and drain region on the
semiconductor substrate, and the first poly-crystal
silicon layer is formed on the gate film.
Claim 11
Dependent Claim
69 words
A multi-layer structure characterized by
comprising: a poly-crystal silicon layer (10) doped with first
impurities of one conductive type at a uniform density;
and a tungsten silicide layer (12) formed on the poly-crystal
silicon layer so as to have a direct contact
therewith characterized in that the tungsten silicide
layer (1) is doped with second impurities of the same
conductive type as the first impurities, at a uniform
density.
Claim 12
Dependent Claim
84 words
A multi-layer structure characterized by
comprising: a first poly-crystal silicon layer (10) doped with
impurities of one conductive type at a uniform density,
characterized by comprising a second poly-crystal silicon layer (16) formed on
the first poly-crystal silicon layer so as to have a
direct contact therewith, and containing no impurities
of one conductive type; and a tungsten silicide layer (11) formed on the
second poly-crystal silicon layer so as to have a
direct contact therewith, and containing no impurities
of one conductive type.
Claim 13
Dependent Claim
97 words
A multi-layer structure characterized by
comprising: a first poly-crystal silicon layer (10) doped with
first impurities of one conductive type at a uniform
density, characterized by comprising a second poly-crystal silicon layer (18) formed on
the first poly-crystal silicon layer so as to have a
direct contact therewith, and doped with impurities, at
a uniform distribution and at a lower density than the
density of the first impurities; and a tungsten silicide layer (11) formed on the
second poly-crystal silicon layer so as to have a
direct contact therewith, and containing no impurities
of a conductive type.
Claim 14
Dependent Claim
97 words
A multi-layer structure characterized by
comprising: a first poly-crystal silicon layer (10) doped with
first impurities of one conductive type at a uniform
density, characterized by comprising a second poly-crystal silicon layer (18) formed on
the first poly-crystal silicon layer so as to have a
direct contact therewith, and doped with impurities, at
a uniform distribution and at a higher density than the
density of the first impurities; and a tungsten silicide layer (11) formed on the
second poly-crystal silicon layer so as to have a
direct contact therewith, and containing no impurities
of one conductive type.
References Cited (Backward Citations)
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