High-frequency power amplifier

Claim 2

The high-frequency power amplifier of claim 1, wherein the input terminal of said detection circuit is connected with an input terminal of said input impedance matching circuit or an output terminal of said output impedance matching circuit.

Claim 3

The high-frequency power amplifier of claim 1, wherein the input terminal of said detection circuit is connected with an output terminal of said input impedance matching circuit or an input terminal of said output impedance matching circuit.

Claim 4

The high-frequency power amplifier of claim 1, wherein the input terminal of said detection circuit is connected with said output bias circuit.

Claim 5

The high-frequency power amplifier of claim 1, wherein said rectification circuit is composed of a pair of diodes which are connected in reverse directions and in parallel, said rectification circuit outputting double pulsating positive voltage.

Claim 6

The high-frequency power amplifier of claim 1, wherein said smoothing circuit comprises a capacitor and a variable resistance, and outputs positive voltage which changes in accordance with changes in a resistance value of said variable resistance.

Claim 7

The high-frequency power amplifier of claim 1, wherein said transistor is either an N-channel MOSFET, an NPN-type bipolar transistor, an N-channel MESFET, or an N-channel heterojunction FET, and has current-voltage characteristics which is a property of a normally-off type, an enhance-mode type, or other similar types.

Claim 8

The high-frequency power amplifier of claim 1, wherein said transistor, said input bias circuit, said output bias circuit, said input impedance matching circuit, said output impedance matching circuit, and said positive voltage generation circuit are formed on a same semiconductor substrate.

Claim 9

The high-frequency power amplifier of claim 1, wherein said transistor, said input bias circuit, said output bias circuit, said input impedance matching circuit, and said output impedance matching circuit are formed on a same semiconductor substrate.

Claim 10

A high-frequency power amplifier comprising: a former-stage transistor for high-frequency power which operates and whose current-voltage characteristics greatly change when positive voltage is supplied on an input terminal of said former-stage transistor; a first input bias circuit connected with the input terminal of said former-stage transistor; a first output bias circuit connected with an output terminal of said former-stage transistor; a first input impedance matching circuit connected with the input terminal of said former-stage transistor; a first output impedance matching circuit connected with the output terminal of said former-stage transistor; a latter-stage transistor for high-frequency power which operates and whose current-voltage characteristics greatly change when positive voltage is supplied on an input terminal of said a latter-stage transistor; a second input bias circuit connected with the input terminal of said latter-stage transistor; a second output bias circuit connected with an output terminal of said latter-stage transistor; a second input impedance matching circuit connected with the input terminal of said latter-stage transistor; a second output impedance matching circuit connected with the output terminal of said latter-stage transistor; and a positive voltage generation circuit comprising, wherein said positive voltage generation circuit comprises: a detection circuit whose input terminal is connected to an input side or an output side of said latter-stage transistor, said detection circuit detecting and outputting part of high-frequency power to be entered to said latter-stage transistor or to be outputted from said latter-stage transistor; a rectification circuit whose input terminal is connected with an output terminal of said detection circuit, said rectification circuit rectifying said part of the high-frequency power outputted from said detection circuit and outputting pulsating positive voltage; and a smoothing circuit whose input terminal is connected with an output terminal of said rectification circuit and whose output terminal is connected with each input terminal of said first input bias circuit and said second input bias circuit, said smoothing circuit smoothing the pulsating positive voltage outputted from said rectification circuit and outputting positive voltage, and outputs positive voltage which increases or decreases in accordance with an increase or decrease in said part of the high-frequency power detected by said detection circuit to said each input terminal of said first input bias circuit and said second input bias circuit without intervention of a direct-current power supply.

Claim 11

The high-frequency power amplifier of claim 10, wherein said rectification circuit is composed of a pair of diodes which are connected in reverse directions and in parallel, said rectification circuit outputting double pulsating positive voltage.

Claim 12

The high-frequency power amplifier of claim 10, wherein said smoothing circuit comprises a voltage division circuit which divides positive voltage into first positive voltage and second positive voltage, and outputs the first positive voltage and the second positive voltage to the input terminal of said first input bias circuit and the input terminal of said second input bias circuit, respectively.

Claim 13

The high-frequency power amplifier of claim 12, wherein said voltage division circuit is composed of a plurality of division resistances including at least one variable resistance, and outputs the first positive voltage or the second positive voltage which changes in accordance with changes in a resistance value of said at least one variable resistance.

Claim 14

The high-frequency power amplifier of claim 10, wherein each of said former-stage transistor and said latter-stage transistor is either an N-channel MOSFET, an NPN-type bipolar transistor, an N-channel MESFET, or an N-channel heterojunction FET, and has current-voltage characteristics which is a property of a normally-off type, an enhance-mode type, or other similar types.

Claim 15

The high-frequency power amplifier of claim 10, wherein said former-stage transistor, said first input bias circuit, said first output bias circuit, said first input impedance matching circuit, said first output impedance matching circuit, said latter-stage transistor, said second input bias circuit, said second output bias circuit, said second input impedance matching circuit, said second output impedance matching circuit, and said positive voltage generation circuit are formed on a same semiconductor substrate.

Claim 16

The high-frequency power amplifier of claim 10, wherein said former-stage transistor, said first input bias circuit, said first output bias circuit, said first input impedance matching circuit, said first output impedance matching circuit, said latter-stage transistor, said second input bias circuit, said second output bias circuit, said second input impedance matching circuit, and said second output impedance matching circuit are formed on a same semiconductor substrate.