EP0451909A2
Expired / Lapsed
EP
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Predistortion linearizer for microwave power amplifiers
Assignee: Italtel SpA
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Filing: 1991-04-05
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Granted: —
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Expires: 2011-04-05
Abstract
Abstract Predistortion linearizer for microwave power amplifiers wherein a single transistor (FT1), e.g. the GaAsFET type, subpolarized near the pinch-off condition, carries out the functions both of gain expander amplifier for recovery of amplitude distortion of the power amplifier and command signal generator for a dephaser element (D1) for recovery of the phase distortion of the power amplifier (FIG. 1).
Inventors
- 👤 Antonio Abbiati
- 👤 Carlo Buoli
- 👤 Luigi Cervi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 12:07
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/32; H03F1/3241; H03F1/3276
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
Predistortion linearizer for a final microwave power amplifier subject to gain compression and phase distortion characterized in that it comprises: - a first subpolarized transistor (FT1) which constitutes a gain expander stage with increase in the power of the signal at its input; and - a phase shifter (D1; D1, D2; FT2) controlled by the continuous component of the voltage present at the output of said first transistor, which introduces a phase distortion which offsets that of said final power amplifier.
Claim 2
Dependent Claim
20 words
Linearizer as in claim 1 characterized in that said first transistor (FT1) is placed upstream of said final power amplifier.
Claim 3
Dependent Claim
17 words
Linearizer as in claim 1 characterized in that said first transistor (FT1) is said final power amplifier.
Claim 4
Dependent Claim
32 words
Linearizer as in claim 2 or 3 characterized in that said first transistor (FT1) is a GaAsFET in common source configuration whose gate polarization voltage (VG) is adjustable to obtain said subpolarization.
Claim 5
Dependent Claim
31 words
Linearizer as in claim 2 or 3 characterized in that said first transistor (FT1) is bipolar in common emitter configuration whose base polarization voltage (VG) is adjustable to obtain said subpolarization.
Claim 6
Dependent Claim
43 words
Linearizer as in claim 2 characterized in that said phase shifter consists of a varactor diode (D1) placed in parallel for the signals and coupled continuously to the output of said first transistor (FT1), the polarization voltage (VP) of said diode being adjustable.
Claim 7
Dependent Claim
48 words
Linearizer as in claim 2 characterized in that said phase shifter consists of two varactor diodes (D1, D2) placed in antiparallel for the signals and coupled continuously at the output of said first transistor (FT1), the polarization voltage (VP, VP2) of each of said diodes being independently adjustable.
Claim 8
Dependent Claim
46 words
Linearizer as in claim 2 characterized in that said phase shifter is an amplifier stage placed downstream of said gain expander stage consisting of a second GaAsFET transistor (FT2) in common source configuration whose input is coupled continuously with the output of said first transistor (FT1).
Claim 9
Dependent Claim
46 words
Linearizer as in claim 2 characterized in that said phase shifter is an amplifier stage placed downstream of said gain expander stage consisting of a third bipolar transistor (FT2) in common emitter configuration whose input is coupled continuously with the output of said first transistor (FT1).
Claim 10
Dependent Claim
29 words
Linearizer as in claims 8 or 9 characterized in that said continuous coupling between the first and second transistors is embodied by a wide band inverting continuous amplifier (AMP).
Claim 11
Dependent Claim
29 words
Linearizer as in claims 8 or 9 characterized in that said continuous coupling between the first and second transistors is embodied by a wide band noninverting continuous amplifier (AMP).
References Cited (Backward Citations)
No citation records indexed.
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