Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
56 words
A method of making an integrated circuit having an oxidizable layer
(2) with a surface, including the step of: growing an oxide layer (3) on the oxidizable surface; and characterized
by the steps of depositing a high-k dielectric layer (4) on the grown oxide layer; and depositing an oxide layer (5) on the high-k dielectric layer.
Claim 2
Dependent Claim
20 words
The method as recited in claim 1, further comprising the step of: densifying the deposited oxide in an oxidizing atmosphere.
Claim 3
Dependent Claim
29 words
The method as recited in claim 2, wherein the high-k dielectric layer is
selected from the group of Ta 2 O 5 , TiO 2 , and perovskite materials.
Claim 4
Dependent Claim
41 words
The method as recited in claim 2, wherein the perovskite material is of
the form MTiO 3 , where M is selected from the group of Sr, Ba, La, Ti, Pb,
Ba x Sr 1-x and Pb x La 1-x .
Claim 5
Dependent Claim
23 words
The method as recited in claim 2, wherein the oxide layers are oxides
of silicon, and the oxidizable layer is a silicon substrate.
Claim 6
Dependent Claim
21 words
The method as recited in claim 5, further comprising the step of
depositing a conductive layer on the deposited oxide layer.
Claim 7
Dependent Claim
44 words
An integrated circuit having an oxidizable layer (2) with a surface
having a grown oxide layer (3) on the oxidizable surface; characterized by a high-k dielectric layer (4) on the grown oxide layer; and a deposited oxide layer (5) on the high-k dielectric layer.
Claim 8
Dependent Claim
19 words
The integrated circuit as recited in claim 7, wherein the deposited
oxide layer is a densified deposited oxide layer.
Claim 9
Dependent Claim
30 words
The integrated circuit as recited in claim 8, wherein the high-k
dielectric layer is selected from the group of Ta 2 O 5 , TiO 2 , and perovskite
materials.
Claim 10
Dependent Claim
42 words
The integrated circuit as recited in claim 8, wherein the perovskite
material is of the form MTiO 3 , where M is selected from the group of Sr, Ba, La, Ti,
Pb, Ba x Sr 1-x and Pb x La 1-x .
Claim 11
Dependent Claim
24 words
The integrated circuit as recited in claim 8, wherein the oxide layers
are oxides of silicon, and the oxidizable layer is a silicon substrate.