Patent EP0843348A2 successfully refreshed from Google Patents.
EP0843348A2
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EP
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Method and apparatus for processing a semiconductor substrate
Assignee: Applied Materials Inc
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Filing: 1997-11-12
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Granted: —
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Expires: 2017-11-12
Abstract
Abstract The present invention provides systems, methods and apparatus for high temperature (at least about 500-800 DEG C) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
Inventors
- 👤 Xia Li-Qun
- 👤 Nemani Srinivas
- 👤 Yieh Ellie
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 04:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/02; C23C16/0227; C23C16/0245; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/4401; C23C16/4405; C23C16/4411; C23C16/4412; C23C16/45561; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/46; C23C16/52; C23C16/54; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6516; H10P14/6548; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
Process for depositing an insulating layer on a substrate on a heater in
a chamber, said process comprising the steps of: heating said heater in said chamber to a temperature of at least about
500° C; pressurizing said chamber to a pressure of between about 10-760 Torr
(1,3 x 10 3 to 1 x 10 5 Pa); introducing a precursor gas mixture comprising oxygen and silicon
into said chamber to deposit a silicon oxide film on said substrate on said
heater at said temperature.
Claim 2
Dependent Claim
21 words
Process of claim 1, wherein said substrate has at least one gap having
an aspect ratio of at least about 2.5:1.
Claim 3
Dependent Claim
16 words
Process of claim 2, wherein said at least one gap is shallow trench used
for isolation.
Claim 4
Dependent Claim
19 words
Process of claim 1, wherein said silicon oxide is deposited by
introducing TEOS and O 3 into said chamber.
Claim 5
Dependent Claim
41 words
Process of claim 3, further comprising the step of introducing a
precursor gas mixture comprising oxygen, silicon, and dopants into said
chamber to deposit a doped silicon oxide film on said at least one gap prior to
depositing said silicon oxide.
Claim 6
Dependent Claim
64 words
Process of claim 5, further comprising the step of removing said doped
silicon oxide film from said at least one gap after dopants from said doped
silicon oxide film are driven into said substrate and prior to depositing said
silicon oxide, said dopants driven into said substrate providing a channel top
diffusion in said substrate at the surface of said at least one gap.
Claim 7
Dependent Claim
21 words
Process of claim 6, wherein said dopants are comprised of boron for
PMOS transistor isolation or phosphorus for NMOS transistor isolation.
Claim 8
Dependent Claim
17 words
Process of claim 7, wherein said boron is from TEB and wherein said
phosphorus is from TEPO.
Claim 9
Dependent Claim
117 words
Substrate processing apparatus comprising: a vacuum chamber, said vacuum chamber beeing operable at a
pressure between about 10-760 Torr (1,3 x 10 3 to 1 x 10 5 Pa) by a vacuum
system; a source of reactive gases comprising silicon and oxygen; a gas distribution manifold, located within said chamber, for
introducing said reactive gases into said vacuum chamber; a ceramic heater for holding a wafer, said ceramic heater being capable
of being heated to a temperature of at least about 500°C; wherein a layer of silicon oxide is deposited at said temperature on
said wafer from a reaction of silicon and oxygen in said reactive gases
introduced into said vacuum chamber from said gas distribution manifold.
Claim 10
Dependent Claim
45 words
Apparatus of claim 9, further comprising: a processor for controlling a source distribution system coupled to said
gas distribution manifold, said ceramic heater and said vacuum system; and a memory coupled to said processor and storing a program for
directing the operation of said system.
References Cited (Backward Citations)
No citation records indexed.
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