Patent EP0843345A2 successfully refreshed from Google Patents.
EP0843345A2
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EP
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Method of manufacturing a semiconductor article
Assignee: Canon Inc
•
Filing: 1997-11-14
•
Granted: —
•
Expires: 2017-11-14
Abstract
Abstract A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 11:51
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1924; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/96; Y10S438/977
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
115 words
A method of manufacturing a semiconductor
article, characterized by comprising steps of: forming a diffusion region at least on the surface
of one of the sides of a silicon substrate by diffusing
an element capable of controlling the conduction type; forming a porous silicon layer in a region including
said diffusion region; preparing a first substrate by forming a nonporous
semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate
together to produce a multilayer structure with said
nonporous semiconductor layer located inside; splitting said multilayer structure along said
porous silicon layer but not along said diffusion
region; and removing the porous silicon layer remaining on said
split second substrate.
Claim 2
Independent Claim
136 words
A method of manufacturing a semiconductor
article, characterized by comprising steps of: forming a diffusion region at least on the surface
of one of the sides of a silicon substrate by diffusing
an element capable of controlling the conduction type; forming a porous silicon layer in a region including
said diffusion region; preparing a first substrate by forming a nonporous
semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate
together to produce a multilayer structure with said
nonporous semiconductor layer located inside; splitting said multilayer structure along said
porous silicon layer but not along said diffusion
region; removing the porous silicon layer remaining on said
split second substrate; and reusing the substrate obtained by removing the
porous layer remaining on said separated first
substrate as material of another first substrate.
Claim 3
Independent Claim
136 words
A method of manufacturing a semiconductor
article, characterized by comprising steps of: forming a diffusion region at least on the surface
of one of the sides of a silicon substrate by diffusing
an element capable of controlling the conduction type; forming a porous silicon layer in a region including
said diffusion region; preparing a first substrate by forming a nonporous
semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate
together to produce a multilayer structure with said
nonporous semiconductor layer located inside; splitting said multilayer structure along said
porous silicon layer but not along said diffusion
region; removing the porous silicon layer remaining on
said split second substrate; and reusing the substrate obtained by removing the
porous layer remaining on said separated first
substrate as material of another second substrate.
Claim 4
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
forming a diffusion region is performed by means of a
diffusion technique.
Claim 5
Dependent Claim
34 words
A method of manufacturing a semiconductor
article according to claim 4, wherein said element
capable of controlling the conduction type is an
element capable of controlling the conduction type of
silicon to the n-type.
Claim 6
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 5, wherein said element
capable of controlling the conduction type is selected
from P, As and Sb.
Claim 7
Dependent Claim
34 words
A method of manufacturing a semiconductor
article according to claim 4, wherein said element
capable of controlling the conduction type is an
element capable of controlling the conduction type of
silicon to the p-type.
Claim 8
Dependent Claim
22 words
A method of manufacturing a semiconductor
article according to claim 7, wherein said element
capable of controlling the conduction type is B.
Claim 9
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 4, wherein said diffusion
technique is adapted to thermally diffuse said element
into said silicon substrate.
Claim 10
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 8, wherein said element
capable of controlling the conduction type is supplied
in the form of gas.
Claim 11
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 10, wherein said gas is B 2 H 6 .
Claim 12
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 8, wherein said element
capable of controlling the conduction type is supplied
in the form of liquid.
Claim 13
Dependent Claim
18 words
A method of manufacturing a semiconductor
article according to claim 12, wherein said liquid is
BBr 3 .
Claim 14
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 8, wherein said element
capable of controlling the conduction type is supplied
in the form of solid.
Claim 15
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 14, wherein said solid is
B 2 O 3 .
Claim 16
Dependent Claim
31 words
A method of manufacturing a semiconductor
article according to claim 8, wherein said element
capable of controlling the conduction type is supplied
from a solid object arranged on said silicon substrate.
Claim 17
Dependent Claim
24 words
A method of manufacturing a semiconductor
article according to claim 16, wherein said solid
object is selected from CVD film, BSG and spin-coated
film.
Claim 18
Dependent Claim
45 words
A method of manufacturing a semiconductor
article according to claim 4, wherein the concentration
of said element capable of controlling the conduction
type and contained in said diffusion region is
controlled within a range between 5.0×10 16 /cm 3 and
5.0×10 20 /cm 3 .
Claim 19
Dependent Claim
45 words
A method of manufacturing a semiconductor
article according to claim 18, wherein the
concentration of said element capable of controlling
the conduction type and contained in said diffusion
region is controlled within a range between 1.0×10 17 /cm 3 and 2.0×10 20 /cm 3 .
Claim 20
Dependent Claim
45 words
A method of manufacturing a semiconductor
article according to claim 19, wherein the
concentration of said element capable of controlling
the conduction type and contained in said diffusion
region is controlled within a range between 5.0×10 17 /cm 3 and 1.0×10 20 /cm 3 .
Claim 21
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 4, wherein the thickness of
said diffusion layer is controlled within a range
between 100Å and 100µm.
Claim 22
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 21, wherein the thickness of
said diffusion layer is controlled within a range
between 500Å and 50µm.
Claim 23
Dependent Claim
27 words
A method of manufacturing a semiconductor
article according to claim 22, wherein the thickness of
said diffusion layer is controlled within a range
between 5,000Å and 30µm.
Claim 24
Dependent Claim
28 words
A method of manufacturing a semiconductor
article according to claim 1, wherein the thickness of
said porous silicon layer is controlled within a range
between 1µm and 150µm.
Claim 25
Dependent Claim
28 words
A method of manufacturing a semiconductor
article according to claim 24, wherein the thickness of
said porous silicon layer is controlled within a range
between 2µm and 80µm.
Claim 26
Dependent Claim
28 words
A method of manufacturing a semiconductor
article according to claim 25, wherein the thickness of
said porous silicon layer is controlled within a range
between 5µm and 50µm.
Claim 27
Dependent Claim
46 words
A method of manufacturing a semiconductor
article according to claim 1, wherein a diffusion
region and a porous layer are formed on each of the
oppositely disposed surfaces of said silicon substrate
and subsequently a nonporous semiconductor layer is
formed on each of said porous layers.
Claim 28
Dependent Claim
29 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
splitting said multilayer structure is performed by
externally applying force to said porous layer.
Claim 29
Dependent Claim
34 words
A method of manufacturing a semiconductor
article according to claim 28, wherein said application
of force is performed by applying pressure, tensile
force in a direction perpendicular to the substrate
surface or shearing force.
Claim 30
Dependent Claim
38 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
splitting said multilayer structure is performed by
exposing the porous silicon at an end of the structure
and subsequently oxidizing the bonded substrates.
Claim 31
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
splitting said multilayer structure is performed by
heating said multilayer structure.
Claim 32
Dependent Claim
23 words
A method of manufacturing a semiconductor
article according to claim 31, wherein said heating is
performed by entirely heating said porous multilayer
structure.
Claim 33
Dependent Claim
22 words
A method of manufacturing a semiconductor
article according to claim 31, wherein said heating is
performed by partly heating said multilayer structure.
Claim 34
Dependent Claim
21 words
A method of manufacturing a semiconductor
article according to claim 33, wherein said heating is
performed by means of laser irradiation.
Claim 35
Dependent Claim
18 words
A method of manufacturing a semiconductor
article according to claim 34, wherein said laser is
carbon dioxide laser.
Claim 36
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 33, wherein said heating is
performed by flowing an electric current through said
porous silicon layer.
Claim 37
Dependent Claim
23 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said porous
silicon layer is obtained by anodizing said silicon
substrate.
Claim 38
Dependent Claim
22 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said nonporous
semiconductor layer comprises a single crystal silicon
layer.
Claim 39
Dependent Claim
24 words
A method of manufacturing a semiconductor
article according to claim 38, wherein said single
crystal silicon layer is formed by means of epitaxial
growth.
Claim 40
Dependent Claim
29 words
A method of manufacturing a semiconductor
article according to claim 38, wherein said first
substrate is prepared by forming a silicon oxide layer
on said single crystal silicon layer.
Claim 41
Dependent Claim
23 words
A method of manufacturing a semiconductor
article according to claim 40, wherein said silicon
oxide layer is formed by means of thermal oxidation.
Claim 42
Dependent Claim
21 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said porous
semiconductor layer comprises a compound semiconductor
layer.
Claim 43
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 42, wherein said compound
semiconductor layer has single crystal structure.
Claim 44
Dependent Claim
21 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said second
substrate comprises a single crystal silicon substrate.
Claim 45
Dependent Claim
30 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said second
substrate is prepared by forming oxide film on the
surface of said single crystal silicon substrate.
Claim 46
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said second
substrate comprises a light transmitting substrate.
Claim 47
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 46, wherein said light
transmitting substrate comprises a glass substrate.
Claim 48
Dependent Claim
28 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said bonding step
is performed by bringing the two substrate into close
contact with each other.
Claim 49
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said bonding step
is performed by means of anodic bonding, pressurization
and heat treatment.
Claim 50
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
removing said porous silicon layer is performed by
means of polishing.
Claim 51
Dependent Claim
26 words
A method of manufacturing a semiconductor
article according to claim 1, wherein said step of
removing said porous silicon layer is performed by
means of etching.
Claim 52
Dependent Claim
20 words
A method of manufacturing a semiconductor
article according to claim 51, wherein said etching is
performed by using hydrofluoric acid.
Claim 53
Dependent Claim
15 words
A semiconductor article prepared by a method
according to any of claims 1 through 52.
References Cited (Backward Citations)
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