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EP0798777A2
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Method of metallizing submicronie (e.g. micronie) contact holes in semiconductor body
Assignee: Infineon Technologies AG
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Filing: 1997-03-13
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Granted: —
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Expires: 2017-03-13
Abstract
Abstract Translated from German Zur Metallisierung von Submikron-Kontaktlöchern in Halbleiterkörpern wird durch einen einzigen CVD-Prozeß innerhalb einer einzigen CVD-Kammer zunächst eine titanreiche Schicht und anschließend eine niederohmige TiSi 2 -Schicht abgeschieden. To metallize submicron contact holes in semiconductor bodies, a single CVD process first deposits a titanium-rich layer and then a low-resistance TiSi 2 layer within a single CVD chamber.
Inventors
- 👤 Konrad Dr. Dipl.-Phys. Hieber
- 👤 Helmuth Dipl.-Ing. Ireichel (Fh)
- 👤 Heinrich Dr. Dipl.-Chem. Körner
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/054; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10P14/412; H10P14/414; H10P14/44; H10P52/00; H10P52/40; H10P52/403; H10W20/033; H10W20/056; H10W20/062; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/907; Y10S438/908
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