Patent EP0759619A2 successfully refreshed from Google Patents.
EP0759619A2
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EP
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Magnetoresistive element and memory element
Assignee: Panasonic Holdings Corp
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Filing: 1996-08-20
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Granted: —
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Expires: 2016-08-20
Abstract
Abstract A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film 2 to provide a window for excitation light is arranged on a substrate 1 via a buffer layer. Another semiconductor film 3 and a nonmagnetic metallic film (or a nonmagnetic insulating film) 4 are arranged on the semiconductor film 2 successively. A magnetic film 5 having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film) 4. An electrode 6 is arranged beneath the substrate 1 and another electrode 7 is arranged on the magnetic film 5. By radiating a laser light beam to the semiconductor film acting as a window 2, electrons having spin polarization are excited in the semiconductor film 3 so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film 5 on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.
Inventors
- 👤 Hiroshi Sakakima
- 👤 Takeshi Uenoyama
- 👤 Yasuhiro Kawawake
- 👤 Yousuke Irie
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 13:05
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11C; G11C11/00; G11C11/02; G11C11/14; B; B82; B82Y; B82Y10/00; B82Y25/00; G11B2005/3996
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
42 words
A magnetoresistive element comprising a polarizable light source, a semiconductor portion capable of spin polarization of electrons by light excitation using the light source, a magnetic film portion, and electrode portions arranged on the semiconductor portion and the magnetic film portion respectively.
Claim 2
Dependent Claim
20 words
The magnetoresistive element according to claim 1, wherein the semiconductor portion comprises two kinds of semiconductors having different lattice constants.
Claim 3
Dependent Claim
23 words
The magnetoresistive element according to claim 1, wherien a nonmagnetic metallic film is provided between the magnetic film poriton and the semiconductor portion.
Claim 4
Dependent Claim
26 words
The magnetoresistive element according to claim 3, wherein the nonmagnetic metallic film comprises at least one selected from the group consisting of Cu, Ag and Au.
Claim 5
Dependent Claim
19 words
The magnetoresistive element according to claim 3, wherein the nonmagnetic metallic film comprises two kinds of nonmagnetic metallic films.
Claim 6
Dependent Claim
47 words
The magnetoresistive element according to claim 5, wherein, for the two kinds of nonmagnetic metallic film, the film contacting the semiconductor portion comprises Cs and the other film contacting the magnetic film portion comprises at least one selected from the group consisting of Cu, Ag and Au.
Claim 7
Dependent Claim
21 words
The magnetoresistive element according to claim 3, wherein the film thickness of the nonmagnetic metallic film is 100 nm or less.
Claim 8
Dependent Claim
23 words
The magnetoresistive element according to claim 1, wherein a nonmagnetic insulation film is provided between the magnetic film portion and the semiconductor portion.
Claim 9
Dependent Claim
21 words
The magnetoresistive element according to claim 8, wherein the nonmagnetic insulating film has the same crystalline structure as the semiconductor portion.
Claim 10
Dependent Claim
46 words
The magnetoresistive element according to claim 1, wherein the magnetic film portion is a ferromagnetic film mainly comprising Ni X Co Y Fe Z , with the atomic composition ratio of X = 0.6 to 0.9, Y = 0 to 0.4, Z = 0 to 0.3.
Claim 11
Dependent Claim
46 words
The magnetoresistive element according to claim 1, wherein the magnetic film portion is a ferromagnetic film mainly comprising Ni X 'Co Y 'Fe Z ', with the atomic composition ratio of X' = 0 to 0.4, Y' = 0.2 to 0.95, Z = 0 to 0.5.
Claim 12
Dependent Claim
78 words
A memory element comprising a polarizable light source, a semiconductor portion capable of spin polarization of electrons by light excitation using the light source, a magnetic film portion having a square magnetization curve contacting to the semiconductor portion, a conductor line portion for reading out information contacting both to the semiconductor portion and the magnetic film portion, and a conductor line portion for recording information arranged in the vicinity of the magnetic film portion via a insulating film.
Claim 13
Dependent Claim
20 words
The memory element according to claim 12, wherein the semiconductor portion comprises two kinds of semiconductors having different lattice constants.
Claim 14
Dependent Claim
23 words
The memory element according to claim 12, wherein a nonmagnetic metallic film is provided between the magnetic film poriton and the semiconductor portion.
Claim 15
Dependent Claim
26 words
The memory element according to claim 14, wherein the nonmagnetic metallic film comprises at least one selected from the group consisting of Cu, Ag and Au.
Claim 16
Dependent Claim
19 words
The memory element according to claim 14, wherein the nonmagnetic metallic film comprises two kinds of nonmagnetic metallic films.
Claim 17
Dependent Claim
47 words
The memory element according to claim 16, wherein, for the two kinds of nonmagnetic metallic film, the film contacting the semiconductor portion comprises Cs and the other film contacting the magnetic film portion comprises at least one selected from the group consisting of Cu, Ag and Au.
Claim 18
Dependent Claim
21 words
The memory element according to claim 14, wherein the film thickness of the nonmagnetic metallic film is 100 nm or less.
Claim 19
Dependent Claim
23 words
The memory element according to claim 12, wherein a nonmagnetic insulation film is provided between the magnetic film portion and the semiconductor portion.
Claim 20
Dependent Claim
21 words
The memory element according to claim 19, wherein the nonmagnetic insulating film has the same crystalline structure as the semiconductor portion.
Claim 21
Dependent Claim
46 words
The memory element according to claim 12, wherein the magnetic film portion is a ferromagnetic film mainly comprising Ni X Co Y Fe Z , with the atomic composition ratio of X = 0.6 to 0.9, Y = 0 to 0.4, Z = 0 to 0.3.
Claim 22
Dependent Claim
46 words
The memory element according to claim 12, wherein the magnetic film portion is a ferromagnetic film mainly comprising Ni X 'Co Y 'Fe Z ', with the atomic composition ratio of X' = 0 to 0.4, Y' = 0.2 to 0.95, Z' = 0 to 0.5.
Claim 23
Dependent Claim
33 words
The memory element according to claim 12, wherein the conductor line portion for recording information comprises two kinds of conductor lines orthogonal to each other in the vicinity of the magnetic film portion.
References Cited (Backward Citations)
No citation records indexed.
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