EP0753885A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improvements in or relating to semiconductor devices
Assignee: Texas Instruments Inc
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Filing: 1996-07-15
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Granted: —
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Expires: 2016-07-15
Abstract
Abstract An isotropic or partially isotropic etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth patterned photoresist (213, 214) with a buried antireflective coating also acting as an etchstop or a sacrificial layer. The reduced linewidth pattern (213, 214) provide an etch mask for subsequent anisotropic etching of underlying material such as polysilicon (206) or metal or insulator or ferroelectric.
Inventors
- 👤 Jeffrey Alan Mckee
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 08:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
A method of lithography, comprising the steps of: providing a first layer to be patterned; forming an intermediate layer over said first layer; forming a radiation sensitive layer over said intermediate layer; patterning said radiation sensitive layer with radiation to form a first patterned layer; laterally removing portions of said first patterned layer and vertically removing portions of said intermediate layer to form a second patterned layer on a patterned intermediate layer; and removing portions of said first layer using said patterned intermediate layer as at least a portion of a mask.
Claim 2
Dependent Claim
40 words
The method of Claim 1, wherein said step of forming said intermediate layer and said steps of forming said first and second patterned layers comprises; forming said intermediate of organic polymer; and forming first and/or second patterned layers of photoresist.
Claim 3
Dependent Claim
32 words
The method of Claim 1 or Claim 2, wherein said step of laterally removing portions of said first patterned layer and portions of said intermediate layer is simultaneously performed by plasma etching.
Claim 4
Independent Claim
17 words
The method of any preceding claim, wherein said providing step comprises; providing a first layer of polysilicon.
Claim 5
Independent Claim
22 words
The method of any preceding claim, wherein said step of removing portions of said bottom layer is performed by anisotropic plasma etching.
Claim 6
Independent Claim
37 words
The method of any preceding claim, wherein said step of forming an intermediate layer comprises; forming a buried anti-reflective coating (BARC) layer on said first layer, said BARC layer being absorptive of radiation of a first wavelength.
Claim 7
Dependent Claim
34 words
The method of Claim 6, wherein said step of forming a radiation sensitive layer comprises; forming a photoresist layer on said BARC layer, said photoresist layer being exposible by radiation with said first wavelength.
Claim 8
Dependent Claim
41 words
The method of Claim 6 or Claim 7, wherein said step of patterning said radiation sensitive layer comprises; patterning said photoresist layer with radiation including said first wavelength to form a first patterned layer of photoresist with minimum linewidth of W.
Claim 9
Independent Claim
65 words
The method of any of Claims 6 to 8, wherein said step of removing portions of said first patterned layer comprises; etching said first patterned layer to remove an amount ΔW from all surfaces of said first patterned layer and etching said BARC layer to remove portions to form a second patterned layer of photoresist with minimum linewidth of W-2ΔW on a patterned BARC layer.
Claim 10
Dependent Claim
33 words
The method of Claim 9, wherein said step of removing portions of said first layer comprises; etching said first layer using said second patterned layer and patterned BARC layer as an etch mask.
References Cited (Backward Citations)
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