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EP0747500A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Process for forming improved titanium containing barrier layers

Assignee: Applied Materials Inc
•
Filing: 1996-06-07
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Granted: —
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Expires: 2016-06-07
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Abstract

Abstract A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.

Inventors

  • 👤 Murali K. Narasimhan
  • 👤 Kenny King-Tai Ngan
  • 👤 Nitin Khurana
  • 👤 Bradley O. Stimson

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 04:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0676; C23C14/14; C23C14/16; C23C14/165

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 181 words
A method suitable for mass production for forming improved titanium-containing barrier layers in a single substrate sputtering chamber (10) including a target (12), a DC source (13) connected to the target (12), a substrate support (14), an RF power supply (18) connected to the substrate support (14) and a gas inlet (16) comprising the following steps in sequence; a) transferring a substrate (22) into said chamber (10) and sputter depositing in argon atmosphere a first layer of titanium onto said substrate (22); b) sputter depositing a second layer of titanium nitride in an atmosphere of argon and nitrogen onto said substrate; c) turning on the RF power supply (18) and forming a plasma adjacent to the substrate from a mixture of argon and oxygen while continuing to sputter the titanium target by applying DC power to the target; d) turning off the oxygen and sputter depositing a second layer of titanium over the treated titanium nitride layer for at least about three seconds; and e) transferring said substrate out of said chamber (10) and transferring another substrate into said chamber (10).
Claim 2
Dependent Claim 23 words
A method according to claim 1 wherein the combined thickness of the first titanium layer and the titanium nitride layer is about 1000A.
Claim 3
Dependent Claim 23 words
A method according to claim 1 or 2 wherein said titanium nitride layer is treated in the oxygen plasma for about 30 seconds.
Claim 4
Independent Claim 22 words
A method according to any of the preceding claims wherein a layer of TION about 20-100A thick is deposited in step c).
Claim 5
Independent Claim 18 words
A method according to any of the preceding claims wherein said second titanium layer is about 80-200A thick.
Claim 6
Independent Claim 32 words
A method according to any of the preceding claims wherein after transferring the substrate (22) out of the chamber (10), a layer of aluminum is deposited thereover in a second vacuum chamber.

References Cited (Backward Citations)

EP0545602A1 Cited
EP0598422A1 Cited
EP0680077A1 Cited
JPH08130302A Cited

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