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EP0742593A2
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Semiconductor device with multilevel structured insulator and fabrication method thereof
Assignee: NEC Electronics Corp
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Filing: 1996-05-09
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Granted: —
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Expires: 2016-05-09
Abstract
Abstract A semiconductor device with a multi-level insulator formed on a semiconductor substrate is provided, which enables to restrain impurity atoms doped into a material contacted with the insulator from diffusing into the insulator. The multi-level structured insulator contains a first dielectric film formed on the substrate and a second dielectric film formed on the first dielectric film. The first dielectric film is thicker than the second dielectric film so that an interface of the first and second dielectric films exists at a level higher than the central level of the insulator. The first dielectric film is made of an oxide of a semiconductor constituting the substrate. The second dielectric film is made of a nitride or oxynitride of the semiconductor constituting the substrate. The insulator preferably contains only the first and second dielectric films to have a two-level structure. The insulator may further contain a third dielectric films formed on the second dielectric film, thereby having a three-level structure. The third dielectric film is made of an oxide of the semiconductor constituting the substrate, which preferably has a thickness of 3 nm or less.
Inventors
- 👤 Eiji c/o NEC Corporation Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:29
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
A semiconductor device comprising: a semiconductor substrate; a multi-level structured insulator formed on said substrate; said insulator containing a first dielectric film formed on said substrate and a second dielectric film formed on said first dielectric film; said first dielectric film being thicker than said second dielectric film so that an interface of said first and second dielectric films exists at a level higher than the central level of said insulator; said first dielectric film being made of an oxide of a semiconductor constituting said substrate; and said second dielectric film being made of a nitride or oxynitride of said semiconductor constituting said substrate.
Claim 2
Dependent Claim
41 words
The semiconductor device according to claim 1, wherein said second dielectric film is made of a nitride of said semiconductor constituting said substrate; and wherein the thickness of said second dielectric film is in the range from 1 to 2 nm.
Claim 3
Dependent Claim
41 words
The semiconductor device according to claim 1, wherein said second dielectric film is made of an oxynitride of said semiconductor constituting said substrate; and wherein the thickness of said second dielectric film is in the range from 2 to 4 nm.
Claim 4
Dependent Claim
23 words
The semiconductor device according to claim 1, wherein said insulator contains only said first and second dielectric films to have a two-level structure.
Claim 5
Dependent Claim
45 words
The semiconductor device according to claim 1, wherein said insulator contains further contains a third dielectric film formed on said second dielectric film, thereby having a three-level structure; and wherein said third dielectric film is made of an oxide of said semiconductor constituting said substrate.
Claim 6
Dependent Claim
20 words
The semiconductor device according to claim 5, wherein the thickness of said third dielectric film is 3 nm or less.
Claim 7
Dependent Claim
207 words
A fabrication method of a semiconductor device comprising the steps of: (a) forming a first dielectric film on a semiconductor substrate, said first dielectric film being made of an oxide of a semiconductor constituting said substrate; (b) performing a first heat-treatment on said substrate with said first dielectric film in a nitriding atmosphere to nitride said first dielectric film, thereby producing a second dielectric film at an interface of said substrate with said first dielectric film, said second dielectric film being made of an oxynitride of said semiconductor constituting said substrate, and said entire first dielectric film being nitrided to become said second dielectric film; and (c) performing a second heat-treatment on said substrate with said second dielectric film in an oxidizing atmosphere to oxide said substrate, thereby producing a third dielectric film at an interface of said substrate with said second dielectric film, said third dielectric film being made of an oxide of said semiconductor constituting said substrate; wherein said second and third dielectric films constitute a two-level structured insulator; and wherein said third dielectric film is thicker than said second dielectric film so that an interface of said third and second dielectric films exists at a level higher than the central level of said insulator.
Claim 8
Dependent Claim
37 words
The method according to claim 7, wherein said step (a) is performed by a thermal oxidation of said substrate in an oxidizing atmosphere to obtain the thickness of said first dielectric film of 2.5 nm or less.
Claim 9
Dependent Claim
196 words
A fabrication method of a semiconductor device comprising the steps of: (a) forming a first dielectric film on a semiconductor substrate, said first dielectric film being made of an oxide of a semiconductor constituting said substrate; (b) performing a first heat-treatment on said substrate with said first dielectric film in a nitriding atmosphere to nitride said first dielectric film, thereby producing a second dielectric film at an interface of said substrate with said first dielectric film, said second dielectric film being made of an oxynitride of said semiconductor constituting said substrate; and (c) performing a second heat-treatment on said substrate with said first and second dielectric films in an oxidizing atmosphere to oxide said substrate, thereby producing a third dielectric film at an interface of said substrate with said second dielectric film, said third dielectric film being made of an oxide of said semiconductor constituting said substrate; wherein said first, second and third dielectric films constitute a three-level structured insulator; and wherein said third dielectric film is thicker than said second dielectric film so that an interface of said third and second dielectric films exists at a level higher than the central level of said insulator.
Claim 10
Dependent Claim
37 words
The method according to claim 9, wherein said step (a) is performed by a thermal oxidation of said substrate in an oxidizing atmosphere to obtain the thickness of said first dielectric film of 5 nm or less.
Claim 11
Dependent Claim
158 words
A fabrication method of a semiconductor device comprising the steps of: (a) performing a first heat-treatment on a semiconductor substrate in a nitriding atmosphere to nitride said substrate, thereby producing a first dielectric film on a surface of said substrate, said first dielectric film being made of a nitride of a semiconductor constituting said substrate; and (b) performing a second heat-treatment on said semiconductor substrate with said first dielectric film in an oxidizing atmosphere to oxide said substrate, thereby producing a second dielectric film at an interface of said substrate with said first dielectric film, said second dielectric film being made of an oxide of said semiconductor constituting said substrate; wherein said first and second dielectric films constitute a two-level structured insulator; and wherein said second dielectric film is thicker than said first dielectric film so that an interface of said second and first dielectric films exists at a level higher than the central level of said insulator.
Claim 12
Dependent Claim
223 words
A fabrication method of a semiconductor device comprising the steps of: (a) forming a first dielectric film on a semiconductor substrate, said first dielectric film being made of an oxide of a semiconductor constituting said substrate; (b) performing a first heat-treatment on said substrate with said first dielectric film in a nitriding atmosphere to nitride said first dielectric film, thereby producing a second dielectric film at an interface of said substrate with said first dielectric film, said second dielectric film being made of an oxynitride of said semiconductor constituting said substrate; (c) performing a second head-treatment on said substrate with said first and second dielectric films in an oxidizing atmosphere to oxide said substrate, thereby producing a third dielectric film at an interface of said substrate with said second dielectric film, said third dielectric film being made of an oxide of said semiconductor constituting said substrate; and (d) etching an opposite side of said first dielectric film to said substrate until the thickness of said first dielectric film is equal to a specified value; wherein said first, second and third dielectric films constitute a three-level structured insulator; and wherein said third dielectric film is thicker than said second dielectric film so that an interface of said third and second dielectric films exists at a level higher than the central level of said insulator.
Claim 13
Dependent Claim
215 words
A fabrication method of a semiconductor device comprising the steps of: (a) forming a first dielectric film on a semiconductor substrate, said first dielectric film being made of an oxide of a semiconductor constituting said substrate; (b) performing a first heat-treatment on said substrate with said first dielectric film in a nitriding atmosphere to nitride said first dielectric film, thereby producing a second dielectric film at an interface of said substrate with said first dielectric film, said second dielectric film being made of an oxynitride of said semiconductor constituting said substrate; (c) performing a second heat-treatment on said substrate with said first and second dielectric films in an oxidizing atmosphere to oxide said substrate, thereby producing a third dielectric film at an interface of said substrate with said second dielectric film, said third dielectric film being made of an oxide of said semiconductor constituting said substrate; and (d) etching an opposite side of said first dielectric film to said substrate until said second dielectric film is exposed; wherein said second and third dielectric films constitute a two-level structured insulator; and wherein said third dielectric film is thicker than said second dielectric film so that an interface of said third and second dielectric films exists at a level higher than the central level of said insulator.
References Cited (Backward Citations)
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