Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
98 words
An electronic device comprising: a substrate; and a metal wiring formed on the substrate; wherein the metal wiring is formed of highly oriented crystals in which at least half of all grain boundaries are small angle grain boundaries, said small angle grain boundaries defined as one of: grain boundaries with a relative misorientation of 10 o or less in tilt, rotation, or a combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries having a Σ value of 10 or less; and grain boundaries with a relative misorientation of 3 o or less from the coincidence boundaries.
Claim 2
Dependent Claim
29 words
The electronic device of claim 1 , wherein the metal wiring is mainly formed of one metal selected from the group consisting of Al, Cu, Au, Ag, and W.
Claim 3
Dependent Claim
60 words
The electronic device of claim 1 , wherein the metal wiring comprises an alloy selected from the group consisting of an Al-Cu alloy, an Al-Ti alloy, an Al-Cr alloy, an Al-Ta alloy, an Al-Mg alloy, an Al-In alloy, an Al-Li alloy, a Cu-Be alloy, a Cu-Ag alloy, an Au-Pt alloy, an Au-Ag alloy, an Au-Pd alloy, and an Au-Cu alloy.
Claim 4
Dependent Claim
20 words
The electronic device of claim 3, wherein the alloy further comprises Si in an amount of 1 wt% or less.
Claim 5
Dependent Claim
24 words
The electronic device of claim 1 , wherein the grain boundaries contain one element selected from Ga, In, Cd, Bi, Pb, Sn and Tl.
Claim 6
Dependent Claim
78 words
The electronic device of claim 1 , wherein the metal wiring is formed on the surface of an amorphous film of metal, and wherein an interatomic distance of the metal of the amorphous thin film is in an ordered structure in a short range, which is determined from a peak of halo pattern appearing in diffraction measurement, approximately matches with a spacing of a particular crystal plane including atoms with the first-nearest interatomic distance of the metal wiring.
Claim 7
Dependent Claim
146 words
An electronic device comprising: a substrate; a metal wiring formed on the substrate; and a pad part formed on the substrate, connected to the metal wiring, and comprised of an aggregation of fine lines which are successively branched from the metal wiring, wherein the metal wiring and the pad part are formed of crystals selected from the group consisting of single crystals and highly orientated crystals in which at least half of all grain boundaries are small angle grain boundaries having a low grain boundary energy, said small angle grain boundaries defined as one of: grain boundaries with a relative misorientation of 10 o or less in tilt, rotation, or a combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries having a Σ value is 10 or less; and grain boundaries with a relative misorientation of 3 o or less from the coincidence boundary.
Claim 8
Dependent Claim
80 words
The electronic device of claim 7 , wherein the metal wiring and the pad part are formed on the surface of an amorphous thin film of metal, and wherein an interatomic distance of the amorphous thin film in an ordered structure in a short range, which is determined from a peak of halo pattern appearing in diffraction measurement, approximately matches with a spacing of a particular crystal plane including atoms with the first nearest interatomic distance of the metal wiring.
Claim 9
Dependent Claim
24 words
The electronic device of claim 7 , wherein a width of each of the fine lines is wider than that of the metal wiring.
Claim 10
Dependent Claim
25 words
The electronic device of claim 7, wherein the branched fine lines are connected with a connecting fine line running perpendicular to the branched fine lines.
Claim 11
Dependent Claim
27 words
The electronic device of claim 7, wherein a current density of the pad part is one tenth or more of a current density of the metal wiring.
Claim 12
Dependent Claim
48 words
The electronic device of claim 7, wherein the crystals orient in such a manner that an angle formed between the normal line direction of the closed-packed plane of each crystal grain and the normal line direction of the bottom surface of metal wiring is 80 o or less.
Claim 13
Dependent Claim
71 words
A method for manufacturing an electronic device, comprising the step of: depositing a conductor layer mainly formed of Al or Cu on a substrate via an insulative layer, a barrier layer, a contact layer, or the amorphous film layer of claim 6 , wherein one element selected from the group consisting of Ga, In, Cd, Bi, Pb, Sn, and Tl is supplied before or during the deposition of the conductor layer.